Newly Developed Switching Analysis Method for 3.3 kV 400 a Full SiC Module

Hatsukawa, Satoshi; Toyoshima, Shigenori; Tsuno, Takashi; Mikamura, Yasuki

doi:10.4028/www.scientific.net/msf.858.1099

Cited by 4 publications

(2 citation statements)

References 5 publications

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“…To reduce the complexity of the equivalent lumped circuit representing the HF behavior of the package and the PCB layout, the dominant parasitic parameters have to be determined [14]. In the first approximation, the mutual resistances, the mutual inductive couplings with a coupling coefficient below 0.1, and the mutual capacitances below 1 pH calculated by Q3D are neglected.…”

Section: Virtual Dynamic Characterizationmentioning

confidence: 99%

Highly accurate virtual dynamic characterization of discrete SiC power devices

Kovacevic-Badstuebner

Ziemann

Kakarla

et al. 2017

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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Optimized low-inductive layouting of the package interconnections and external PCBs and bus-bars are necessary to benefit from Silicon Carbide (SiC) power devices, which allow inherently very fast switching transitions. In this paper, a comprehensive modeling procedure for highly accurate virtual dynamic characterization of discrete SiC power devices is described taking into account the 3D geometry of the internal and external interconnections of package as input. The modeling requirements are discussed on an example of a commercial 1.2 kV, 80 mΩ SiC Power MOSFET in a standard TO-247 package (Cree C2M0080120D). The software tools, Simplorer, Saber, Q3D and LTSpice, commonly used for modeling and simulation of power modules, are evaluated with respect to their modeling capabilities for SiC devices.

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Section: Virtual Dynamic Characterizationmentioning

confidence: 99%

Highly accurate virtual dynamic characterization of discrete SiC power devices

Kovacevic-Badstuebner

Ziemann

Kakarla

et al. 2017

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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“…The Q3D extractor was used to estimate the frequency-dependent self-and mutualinductances, self-resistances, and self-and mutual-capacitances as previously described, of the power PCB, Device under Test (DUT) PCB, and TO-247 package structure, see Figure 3. To reduce the complexity of the equivalent lumped circuit representing the HF behavior of the package and the PCB layout, the dominant parasitic parameters have to be determined (22). Therefore, the mutual resistances, the mutual inductive couplings with a coupling coefficient below 0.1, and the mutual capacitances below 1pH calculated automatically by Q3D are neglected.…”

Section: Virtual Dynamic Characterizationmentioning

confidence: 99%

(Invited) Requirements for Highly Accurate Multiphysics Modeling of SiC Power MOSFETs and Power Modules

et al. 2017

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Highly accurate modeling of Silicon Carbide (SiC) Power MOSFTEs and their packages represents the basis for virtual prototyping of emerging SiC power devices. The main aim of virtual prototyping is to gain a comprehensive physical understanding of the electro-thermal behavior of SiC power MOSFETs and as well as of the influence of parasitic inductive, capacitive and resistive elements of power modules on the actual dynamic performance of SiC devices without any hardware prototyping. A modeling approach based on linking the results from state-of-the-art commercial multi-domain tools to circuit simulators is presented demonstrating the challenges of developing accurate and fast multi-physics modeling environments, which will enable virtual prototyping of advanced all-SiC power electronics systems with optimized performance.

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