NEXAFS study on carbon-based material formed by focused-ion-beam chemical-vapor-deposition

Kanda, Kazuhiro; Igaki, Jun‐ya; Kato, Yuri; Kometani, Reo; Saikubo, Akihiko; Matsui, Shinji

doi:10.1016/j.radphyschem.2005.07.039

Cited by 39 publications

(35 citation statements)

References 12 publications

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“…The deposited material was confirmed as a diamondlike carbon (DLC), using Raman spectroscopy. 21 Young's modulus was 187 GPa, and the density of the DLC deposited via FIB-CVD was 3.8 Â 10 3 kg/m 3 . 22 The hardness of DLC is sufficient for it to be used as a master mold.…”

Section: Methodsmentioning

confidence: 99%

Density measurement of pillar structure fabricated via nanoimprinting using a poly(dimethylsiloxane) mold

Kang

Nakai

Haruyama

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors report density measurements of a pillar structure that was fabricated via nanoimprinting using a poly(dimethylsiloxane) mold. The imprinted pillars were fabricated using two types of resin, SU-8 and hydrogen silsesquioxane, and were characterized by measuring the spring constant using a scanning probe microscopy cantilever, which was manipulated with a three-axis actuator. The spring constant determined Young's modulus of the imprinted pillars. The authors measured the resonant frequency using the alternating current electrostatic force. Using the results for Young's modulus and the resonant frequency, they determined the density of the pillar structure fabricated via nanoimprinting.

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Section: Methodsmentioning

confidence: 99%

Density measurement of pillar structure fabricated via nanoimprinting using a poly(dimethylsiloxane) mold

Kang

Nakai

Haruyama

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The FIB was scanned to write a square pattern 200 m ¥ 200 m using a computercontrolled scanning system. The produced FIB-CVD DLC was covered with these squares, resulting in a total area that 5¥5 mm 2 . We intended to deposit FIB-CVD films with thickness of a 200 nm.…”

Section: Methodsmentioning

confidence: 99%

“…Using this method, a pillar 80 nm in diameter can be fabricated by irradiating a focused Ga ion beam under a phenanthrene gas atmosphere, which was used as a carbon source, and a complex shape with an overhung, hollow, bridging structure can be formed by scanning a Ga ion beam. The fundamental structure of the carbon material formed by FIB-CVD is diamond-like carbon (DLC) by Raman spectroscopy [1] and near edge Xray absorption fine structure spectroscopy [2]. The Young's modulus of a pillar fabricated using the FIB-CVD technique was reported to exceed 600 GPa [3,4], which is sufficiently large that nanodevices fabricated using this technique offer great possibilities in various applications, such as in the biochemical and electromechanical fields.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, this residual Ga in the core-region transferred to the surface and produced Ga spheres there, which finally vaporized from the film by annealing at temperatures higher than 873 K [3,5,6]. These movements of Ga were known to cause a change in the fundamental structure and several material properties, such as density [4], elemental composition [7], local structure [2,8], Young modulus [3,7] and hardness [8]. As noted above, the properties of nanodevices fabricated using the FIB-CVD technique can be controlled by heat treatment.…”

Section: Introductionmentioning

confidence: 99%

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Departure Process of Ga from DLC Films Fabricated Using Ga Focused Ion Beam Assisted Deposition by Heat Treatment

Kanda

Okada

Kang

et al. 2011

Trans. Mat. Res. Soc. Japan

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The departure process of residual Ga in diamond-like carbon (DLC) film synthesized by focused-ion-beam chemical vapor deposition (FIB-CVD) was investigated by measuring Rutherford backscattering (RBS) spectra of FIB-CVD DLC films after heat treatment in various conditions. The annealing temperature and annealing time were varied in the range of 473-973 K and 0-64 h, respectively. The decrease in Ga concentration and transfer of Ga in the FIB-CVD DLC film were not observed due to heat treatment at less than 573 K. The transfer of residual Ga from inside the film to the surface, and the formation of Ga spheres, which were surrounded by a graphite shell, were observed after heat treatment at 673 K, but Ga concentration did not vary much. When the annealing temperature was higher than 773 K, a decrease in the Ga concentration was observed. The depth profile of Ga in the DLC film in the RBS spectra was observed to divide into two peaks when treated with heat at temperatures higher than 673 K. This splitting can be interpreted as the difference in the desorption rate of Ga in the DLC, graphite shell, and Si substrate.

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“…Raman spectroscopy and near edge X-ray absorption fine structure (NEXAFS) spectroscopy were performed to confirm that the amorphous carbon deposited using phenanthrene was DLC. 1,5) Further, the DLC deposited by FIB-CVD has interesting material characteristics; for example, DLC deposited using a gallium (Ga) FIB contained Ga. This Ga was implanted by Ga þ FIB irradiation onto the DLC surface.…”

Section: Introductionmentioning

confidence: 99%

Graphite Shell Film Formation Induced by Eduction Phenomenon of Ga Implanted by Focused Ion Beam

Kometani¹,

Ichihashi²,

Warisawa³

et al. 2009

jjap

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In this study, we used a transmission electron microscope (TEM) to evaluate the structure of the gallium (Ga) sphere formed on the tip of a diamond-like carbon (DLC) pillar fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD). Until now, details of the phenomenon induced by Ga eduction were remained unclear. We found that a graphite shell was formed on the surface of the Ga sphere after annealing. In addition, we demonstrated that this graphite shell film could be separated from the Ga sphere by performing a second annealing treatment. In-situ observations of the formation of the graphite shell film were carried out using TEM to clarify the process by which it was separated from the Ga sphere. The thermal expansion of Ga led to the separation of the graphite shell film, and Ga was vaporized from within the Ga sphere. These results imply that Ga is able to catalyze for the graphitization of carbon. The development of carbon nanodevices can be expected by using this novel phenomenon induced by Ga. #

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NEXAFS study on carbon-based material formed by focused-ion-beam chemical-vapor-deposition

Cited by 39 publications

References 12 publications

Density measurement of pillar structure fabricated via nanoimprinting using a poly(dimethylsiloxane) mold

Density measurement of pillar structure fabricated via nanoimprinting using a poly(dimethylsiloxane) mold

Departure Process of Ga from DLC Films Fabricated Using Ga Focused Ion Beam Assisted Deposition by Heat Treatment

Graphite Shell Film Formation Induced by Eduction Phenomenon of Ga Implanted by Focused Ion Beam

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