2016
DOI: 10.1016/b978-0-08-100354-1.00014-4
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Next generation lithography—the rise of unconventional methods?

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Cited by 6 publications
(5 citation statements)
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“…In the past decades, the progress in the performance of electronic devices and their functionality commenced with the continuous decreasing of device size, such as transistors, due to the advancements in lithography. Further downscaling of the device size has thus been enhanced by next-generation lithography techniques such as electron beam lithography (EBL), helium ion beam lithography (HIBL), direct self-assembly, and extreme ultraviolet lithography among others. Apart from novel lithographic techniques to achieve the required resolution, novel new resist materials and process integration are required to address the current patterning challenges, arising with new technology nodes. , Even though, it is perceived that compatible resist technology differs entirely from the subsequent progress of the node, more particularly with regard to the stochastics of line edge/width roughness (LER/LWR), resolution, and sensitivity trade-off .…”
Section: Introductionmentioning
confidence: 99%
“…In the past decades, the progress in the performance of electronic devices and their functionality commenced with the continuous decreasing of device size, such as transistors, due to the advancements in lithography. Further downscaling of the device size has thus been enhanced by next-generation lithography techniques such as electron beam lithography (EBL), helium ion beam lithography (HIBL), direct self-assembly, and extreme ultraviolet lithography among others. Apart from novel lithographic techniques to achieve the required resolution, novel new resist materials and process integration are required to address the current patterning challenges, arising with new technology nodes. , Even though, it is perceived that compatible resist technology differs entirely from the subsequent progress of the node, more particularly with regard to the stochastics of line edge/width roughness (LER/LWR), resolution, and sensitivity trade-off .…”
Section: Introductionmentioning
confidence: 99%
“…These are discussed further in the ‘Emerging Lithographic Techniques’ section. Alternative methods such as deep UV lithography (DUVL), extreme UV lithography (EUVL) and x-ray lithography (XRL) are detailed below and involve reducing the wavelength of the light [ 35 , 72 , 73 ].…”
Section: Conventional Lithographic Techniquesmentioning
confidence: 99%
“…X-ray lithography (XRL) (Fig. 1 d ) [ 42 ] is a similar process to UVL except for the UV light being replaced with x-rays created by a synchrotron source, with wavelengths between 0.4 and 4 nm [ 73 ]. The amount of x-ray absorption is dependent on the thickness, density and the atomic number of the material it is travelling through [ 118 ].…”
Section: Conventional Lithographic Techniquesmentioning
confidence: 99%
“…The direct imprint patterning method provides a monolithic integration alternative with better throughput. 11,12 In this study, we benefited from a mold extracted from commercial camera CCDs with 2D patterns. Polydimethylsiloxane (PDMS) and its curing agent with the aspect ratio of 10:1 were mixed and poured on the mold.…”
Section: Fabrication Of 2d Plasmonic Sensor and Cell Culturementioning
confidence: 99%