1995
DOI: 10.1557/proc-395-135
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NH3 as Nitrogen Source in MBE growth of GaN

Abstract: We report on the growth of GaN in GSMBE using NH3 as nitrogen source. Special focus will be on the NH3 cracking, where we applied an On Surface Cracking technique (OSC). Using OSC we achieve photoluminescence linewidths as narrow as 5.5meV (5K) and mobilities of 220 cm2/Vs at room temperature.

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Cited by 20 publications
(11 citation statements)
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“…Nominally undoped heteroepitaxial GaN layers have been grown by gas source molecular beam epitaxy (GSMBE) on (0001) oriented Al 2 O 3 substrates [7] and by metal organic vapour phase epitaxy (MOVPE) [8] deposited simultaneously on 6 off-and onaxis (6H)-SiC (0001) Si substrates.…”
Section: Methodsmentioning
confidence: 99%
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“…Nominally undoped heteroepitaxial GaN layers have been grown by gas source molecular beam epitaxy (GSMBE) on (0001) oriented Al 2 O 3 substrates [7] and by metal organic vapour phase epitaxy (MOVPE) [8] deposited simultaneously on 6 off-and onaxis (6H)-SiC (0001) Si substrates.…”
Section: Methodsmentioning
confidence: 99%
“…7a comparison between 10 K CL spectra of the emissions of two GaN samples (in the following referred to samples A and B) grown by GSMBE under different conditions on sapphire (for details on the growth conditions see Ref. [7]) is reported. The two spectra present a strong emission line at about 3.473 eV and the usual DAP band around 3.21 eV (see for instance [26] and references therein enclosed).…”
Section: Stacking Fault Related Luminescencementioning
confidence: 99%
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“…Additional progress has been achieved in the last few years by implementation in MBE of gaseous ammonia as the source of reactive nitrogen [10] [11] [12] [13]. The ammonia source provides relatively high growth rates, comparable with those of MOCVD, and produces high-quality epitaxial layers [11] [12] [13] [14] without having the effects of accelerated ions on material properties (as takes place in MBE based on plasma activated molecular nitrogen [15]). At the same time the use of an ammonia source results in more complicated heterogeneous chemical reactions occurring on the growing surface.…”
Section: Introductionmentioning
confidence: 99%
“…For GaN thin film synthesis, metalorganic chemical vapor deposition (MOCVD) technique has been the trade process that uses ammonia (NH 3 ) and trimethylgallium (TMG) as the reactants [3][4][5][6][7]. However, high process temperatures (usually higher than 1100 K) retard the indium incorporation in InGaN/GaN heterostructures fabrication [8].…”
Section: Introductionmentioning
confidence: 99%