2021
DOI: 10.1016/j.cej.2020.127547
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Ni2+-doped CsPbI3 perovskite nanocrystals with near-unity photoluminescence quantum yield and superior structure stability for red light-emitting devices

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Cited by 94 publications
(111 citation statements)
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“…Finally, the pristine CsPbI 3 and Mn 2þ (6.7 mol%): CsPbI 3 PeNCs were adopted as the EMLs to construct PeLEDs. Similar to the case previously reported, [16][17][18]25,26] both devices have the same multilayer structured architecture (Figure 5a), where ITO glass, PEDOT: PSS, poly-TPD, PeNCs layer, TPBi, and LiF/Al were used as the anode, hole-injection layer (HIL), hole-transporting layer (HTL), EML, electron-transporting layer (ETL), and cathode, respectively. Apart from TPBi, LiF, and Al fabricated by thermal evaporation, all the other layers were processed via a spin-coating method.…”
Section: Resultssupporting
confidence: 76%
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“…Finally, the pristine CsPbI 3 and Mn 2þ (6.7 mol%): CsPbI 3 PeNCs were adopted as the EMLs to construct PeLEDs. Similar to the case previously reported, [16][17][18]25,26] both devices have the same multilayer structured architecture (Figure 5a), where ITO glass, PEDOT: PSS, poly-TPD, PeNCs layer, TPBi, and LiF/Al were used as the anode, hole-injection layer (HIL), hole-transporting layer (HTL), EML, electron-transporting layer (ETL), and cathode, respectively. Apart from TPBi, LiF, and Al fabricated by thermal evaporation, all the other layers were processed via a spin-coating method.…”
Section: Resultssupporting
confidence: 76%
“…[14,15,19,[30][31][32][33][34] The luminance and operating stability (T 50 value) of the present Mn 2þ : CsPbI 3 PeLED after inserting a LiF buffer layer are comparable with those of the CsPbI 3 -based PeLEDs with the inverted device structure previously reported (Table 2). [16][17][18]25,26,[35][36][37][38][39] Particularly, the device stability (T 50 lifetime) at a high operating luminance (225 min) is better than most of the reported CsPbI 3 PeLEDs. We believe that the device parameters can be further improved via overall optimization of the morphologies and structures of various functional layers in the device, especially the perovskite EML.…”
Section: Resultsmentioning
confidence: 99%
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“…In addition, B-site doping can not only enhance the stability of CsPbI 3 NCs but also boost their optoelectronic performance. Several B-site doping ions have been studied to promote the development of CsPbI 3 NC LEDs, such as Mn 2+ [33], Zn 2+ [34,35], Zr 2+ [36], Y 3+ [35], Cu 2+ [37], Ni 2+ [38], and Sr 2+ [39][40][41]. It should be emphasized that some doping ions, such as Zn 2+ , Cu 2+ , and Sr 2+ , can reduce charge injection barriers and enhance carrier transport properties.…”
Section: Introductionmentioning
confidence: 99%