Nickel oxide sol–gel films from nickel diacetate for electrochromic applications

Garcia-Miquel, J.L; Zhang, Qi; Allen, Stephanie; Rougier, Aline; Blyr, A.; Davies, Helen; Jones, Anthony; Leedham, Timothy J.; Williams, Paul A.; Impey, S. A.

doi:10.1016/s0040-6090(02)01041-6

Cited by 92 publications

(45 citation statements)

References 14 publications

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“…At the same time, η YSZ−Pt is smaller than at V cell =0.6 V. These observations are explained by the known 33,34 interfacial oxidation of Ni, which occurs when η Ni−YSZ > 0.4 V . The oxide layer at the interface and the TPB greatly decreases the electrocatalytic activity of the Ni electrode, reducing i 0, Ni−YSZ and consequently increasing η bias, Ni−YSZ and the total Ni overpotential, η Ni−YSZ .…”

Section: Resultsmentioning

confidence: 80%

Measuring individual overpotentials in an operating solid-oxide electrochemical cell

Gabaly

Graß

McDaniel

et al. 2010

Phys. Chem. Chem. Phys.

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We use photo-electrons as a non-contact probe to measure local electrical potentials in a solid-oxide electrochemical cell. We characterize the cell in operando at near-ambient pressure using spatially-resolved X-ray photoemission spectroscopy. The overpotentials at the interfaces between the Ni and Pt electrodes and the yttria-stabilized zirconia (YSZ) electrolyte are directly measured. The method is validated using electrochemical impedance spectroscopy. Using the overpotentials, which characterize the cell's inefficiencies, we compare without ambiguity the electro-catalytic efficiencies of Ni and Pt, finding that on Ni H 2 O splitting proceeds more rapidly than H 2 oxidation ,while on Pt, H 2 oxidation proceeds more rapidly than H 2 O splitting.

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Section: Resultsmentioning

confidence: 80%

Measuring individual overpotentials in an operating solid-oxide electrochemical cell

Gabaly

Graß

McDaniel

et al. 2010

Phys. Chem. Chem. Phys.

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“…Films based on NiO have enjoyed much interest lately because they combine a reasonable cost with excellent electrochromic properties, which even can be improved by mixing NiO with wide band gap oxides such as MgO or Al 2 O 3 (Garcia-Miquel et al 2003;Avendaño et al 2004Avendaño et al , 2006Avendaño et al , 2007Penin et al 2006;Liu et al 2008;Vidales-Hurtado & Mendoza-Galvín 2008;Zayim et al 2008;Zelazowska & Rysiakiewicz-Pasek 2008;Huang et al 2009;Lou et al 2009). NiO:X, i.e.…”

Section: Nickel Oxidementioning

confidence: 99%

Properties, requirements and possibilities of smart windows for dynamic daylight and solar energy control in buildings: A state-of-the-art review

Bætens

Jelle

Gustavsen

2010

Solar Energy Materials and Solar Cells

1,149

591

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A survey on prototype and currently commercial dynamic tintable smart windows has been carried out. The technologies of electrochromic, gasochromic, liquid crystal and electrophoretic or suspended-particle devices were examined and compared for dynamic daylight and solar energy control in buildings. Presently, state-of-the art commercial electrochromic windows seem most promising to reduce cooling loads, heating loads and lighting energy in buildings, where they have been found most reliable and able to modulate the transmittance up to 68 percent of the total solar spectrum. Their efficiency has already been proven in hot Californian climates, but more research is necessary to validate the products for colder climates, and to improve furthermore the commercial products in order to control the indoor climate in a more energy efficient way by reducing both heating and cooling loads.

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“…Films of nickel oxide have been grown by several deposition techniques, such as pulsed laser deposition, [16,17] sol-gel, [18,19] spray pyrolysis, [20] sputtering, [21,22] and CVD. [23][24][25][26] Among these techniques CVD is also known to yield good step coverage even though the uniformity, in general, is not as good as in ALD on a substrate surface with a pronounced topography.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of NiO by the Ni(thd)₂/H₂O Precursor Combination

Lindahl

Ottosson

Carlsson

2009

Chemical Vapor Deposition

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Polycrystalline nickel oxide is deposited on SiO 2 substrates by alternating pulses of bis(2,2,6,6-tetramethylheptane-3,5-dionato)nickel(II) (Ni(thd) 2 ) and H 2 O. The deposition process shows atomic layer deposition (ALD) characteristics with respect to the saturation behavior of the two precursors at deposition temperatures up to 275 8C. The growth of nickel oxide is shown to be highly dependent on surface hydroxide groups, and a large excess of H 2 O is required to achieve saturation. Throughout the deposition temperature range the amount of carbon in the film, originating from the metal precursor ligand, is in the range 1-2%. Above 275 8C ALD growth behavior is lost in favor of thermal decomposition of the metal precursor. The initial nucleation process is studied by atomic force microscopy (AFM) and reveals nucleation of well-separated grains which coalesce to a continuous film after about 250 ALD cycles.

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Nickel oxide sol–gel films from nickel diacetate for electrochromic applications

Cited by 92 publications

References 14 publications

Measuring individual overpotentials in an operating solid-oxide electrochemical cell

Measuring individual overpotentials in an operating solid-oxide electrochemical cell

Properties, requirements and possibilities of smart windows for dynamic daylight and solar energy control in buildings: A state-of-the-art review

Atomic Layer Deposition of NiO by the Ni(thd)₂/H₂O Precursor Combination

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Nickel oxide sol–gel films from nickel diacetate for electrochromic applications

Cited by 92 publications

References 14 publications

Measuring individual overpotentials in an operating solid-oxide electrochemical cell

Measuring individual overpotentials in an operating solid-oxide electrochemical cell

Properties, requirements and possibilities of smart windows for dynamic daylight and solar energy control in buildings: A state-of-the-art review

Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination

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Product

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About

Atomic Layer Deposition of NiO by the Ni(thd)₂/H₂O Precursor Combination