We report on the electrical characterisation of a series of thin chromium oxide films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the chromium oxide films was varied from 28 Ω/ to 32.6 kΩ/ . The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/ to above 20 GΩ/ . All of the films measured displayed ohmic behaviour at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium-silicon nanowires, interfaces between niobium-silicon and chromium oxide are required. By characterising the interface contact resistance, we found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.15 mΩcm 2 , much lower than the value for direct chromiumoxide to niobium-silicon interfaces, 65 mΩcm 2 . We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.