Nitridation induced surface donor layer in silicon and its impact on the characteristics of n- and p-channel MOSFETs

Impact of the Metal Gate on Carrier Transport in HK/MG Transistors

“…A mobility enhancement is thus observed at high Eeff for electrons with respect to the conventional "universal" mobility (measured on SiO 2 /poly-Si gate stack), together with a lower E eff dependence. Such surface roughness change have already been observed in the past for nitrided oxide MOSFETs (12,13), and could also participate to the electron mobility degradation at lower field. …”

“…Hole mobility measured for 2nm SiO 2 /polySi and SiO 2 /TiN devices (symbols) as a function of the effective field, and data reported from ref (12). for 950°C nitrided SiON and SiO 2 /poly-Si.…”

Reduction of Donor-like Interface Traps of n-Type Metal–Oxide–Semiconductor Field-Effect-Transistors Using Hydrogen-Annealed Wafer and In-situ HF-Vapor Treatment

“…It has been reported that the abundant oxygen in CZ-wafer (25 -30 ppm) with nitrogen form nitrogen-oxygen donor-like traps. 7,8) The abundant oxygen defects can be effectively suppressed in Hi-wafer using high temperature H 2 annealing, 13,14) resulting in high C, I D , and G M for nMOSFETs. In our previous report, 15) the native-oxide-free process using HFV can also reduce the oxygen at interface further.…”

“…5) The reason for this reduction was due to the shallow donor-like traps exist at the interface of oxynitride and silicon substrate, resulting from the nitrogen incorporation. 7,8) Recently gate oxide thickness is fast approaching the physical limit (1.3 -1.5 nm) imposed by the high leakage current due to direct tunneling. Beyond that, silicon dioxide would have to be replaced by high-k materials.…”

&#x2018;wet N<inf>2</inf>O oxidation&#x2019; process and interface state density characterization of nanoscale nitrided SiO<inf>2</inf> for flash memory application

“…Ammonia (NH 3 ) was historically used for the nitridation of tunnel oxides [10,11]. However the NH 3 nitridation introduces large amounts of hydrogen at the interface, giving rise to electron traps and hence the deterioration of the device performance [5,6,12]. Therefore it was expected that the nitridation in pure N 2 O or re-oxidation of thermal oxide in N 2 O will provide tunnel oxides of better quality and reliability [13].…”