2000
DOI: 10.1016/s0169-4332(99)00381-5
|View full text |Cite
|
Sign up to set email alerts
|

Nitride film deposition by femtosecond and nanosecond laser ablation in low-pressure nitrogen discharge gas

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
11
0
1

Year Published

2001
2001
2021
2021

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 35 publications
(12 citation statements)
references
References 4 publications
0
11
0
1
Order By: Relevance
“…[6][7][8][9][10][11][12][13][14][15] In spite of this effort, however, very little has been done on the nature and properties of the material obtained from this ablation process once it is deposited on a substrate surface, either in the form of a continuous film or as nanoparticles. Deposition of continuous thin films using fs lasers has been successful in the case of oxides or nitrides, [16][17][18][19][20][21] with ablation in the presence of a gas in the deposition chamber that reacts or interacts to some extent with the ejected material, leading to the growth of a continuous film on the substrate.…”
Section: Introductionmentioning
confidence: 99%
“…[6][7][8][9][10][11][12][13][14][15] In spite of this effort, however, very little has been done on the nature and properties of the material obtained from this ablation process once it is deposited on a substrate surface, either in the form of a continuous film or as nanoparticles. Deposition of continuous thin films using fs lasers has been successful in the case of oxides or nitrides, [16][17][18][19][20][21] with ablation in the presence of a gas in the deposition chamber that reacts or interacts to some extent with the ejected material, leading to the growth of a continuous film on the substrate.…”
Section: Introductionmentioning
confidence: 99%
“…The additional energetic electrons generated in the plasma through the plasma assistance will increase the effective collisions probability and promote both the activation of N 2 molecules and radical formation. Even if the general features of films growth are driven differently for fs-PLD and ns-PLD [48], the use of fs-PLD under N 2 pressure and plasma assistance does not lead to significant different atomic bonding results compared to the use of nanosecond laser. In particular C≡N bonds are observed under plasma assistance in both conditions [12].…”
Section: Table2 Xps C1s Andmentioning
confidence: 99%
“…Different lasers have been used for subps ablation: KrF excimer laser (λ = 248 nm, ∆t= 0.5 − 500 ps) [2,8,9], Ti: sapphire laser (λ = 780 − 790 nm, ∆t= 100 − 200 fs) [7,10,11] and CPM dye laser (λ = 620 nm, ∆t= 90 fs ) [12].…”
Section: Introductionmentioning
confidence: 99%