Nitrogen–arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE

Self‐Induced Nucleation Growth of GaN Columns by Chemical Vapor Deposition

“…The GaAs nitridation is used as a buffer layer to reduce the lattice mismatch, to grow the zinc‐blende or wurtzite GaN structure, or to enhance the photoluminescence . Our interest in this method is based in the possible obtainment of auto‐sustainable GaN, because it allows to remove the grown material from the substrate.…”

Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride

“…Furthermore, the addition of indium greatly reduces the incorporation rate of nitrogen using DMH, making it harder to control the InGaAsN composition during MOCVD [7,8]. This has led crystal growers to study other nitrogen precursors such as hydrazine [8], ammonia [9], tertiarybutylhydrazine [10,11], and nitrogen trifluoride [8,12]. NF 3 is a promising source of nitrogen for InGaAsN, since it exhibits high incorporation efficiency and is not affected by the presence of indium [8].…”