Nitrogen-doped transparent tin oxide thin films deposited by sputtering

Kim, Youngrae; Kim, Sun-Phil; Kim, Sung‐Dong; Kim, Sarah Eunkyung

doi:10.1016/j.cap.2011.03.081

Cited by 14 publications

(6 citation statements)

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“…This phenomenon of donor formation by nitrogen incorporation is opposite to the nitrogen incorporated SnO 2 thin films, in which nitrogen created acceptors. 15 For 40% nitrogen content, the n-type conductivity of SnO thin film as high as 79.97 −1 cm −1 was achieved. The carrier concentration and mobility were 9.38×10 19 cm −3 and 5.32 cm 2 /V s, respectively.…”

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confidence: 97%

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P- to n-Type Conductivity Inversion of Nitrogen-Incorporated SnO Deposited via Sputtering

Kim

et al. 2012

ECS Solid State Letters

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The p-type to n-type conductivity inversion of SnO thin films was demonstrated through nitrogen incorporation via reactive RF sputtering. The undoped SnO thin film showed a relatively low p-type conductivity of 0.05 −1 cm −1 and it was lowered slightly to 0.04 −1 cm −1 with nitrogen incorporation. Then the SnO thin films exhibited the n-type conductivity of 79.97 −1 cm −1 as the nitrogen incorporation was increased. The undoped SnO thin film consisted of a polycrystalline SnO phase with a preferred (101) orientation; however, with nitrogen incorporation, the preferred orientation was suppressed, and the SnO thin films became nanocrystalline.Undoped SnO 2 thin films have been studied widely due to their relatively large optical bandgap of 3.6 eV, higher exciton binding energy of 130 meV, and excellent transparency of >85%. 1 SnO 2 generally has n-type conductivity due to the existence of intrinsic defects, such as oxygen deficiencies and tin interstitials. The electrical conductivity of n-type SnO 2 thin films can be achieved as high as 180 −1 cm −1 . 2 With the recent interest in optoelectronic devices and oxide thin film transistor (TFT) applications, a high purified p-type oxide semiconductor with a good electrical conductivity is needed, but it is very challenging due to the low hall mobility of tin oxide. There have been few reports on p-type oxide semiconductors, for example Cu oxide and Zn oxide. [3][4][5][6] In the case of p-type tin oxide it can be achieved through doping in SnO 2 using elements with a lower valence cation, such as antimony, indium, manganese, aluminum, or zinc as the acceptor impurity. 7-11 Also, nitrogen has been suggested to be an outstanding p-type dopant in SnO 2 due to its suitable ion size and electronegativity, high solubility limit, and non-toxicity. 12 However, extensive studies on nitrogen incorporation have not yet been undertaken. Few studies have been performed on the chemical state of nitrogen in SnO 2 . 12-15 Nitrogen can be incorporated as a pure tin oxide with few nitrogen substitutions as a tin nitride or as other tin oxide species which can generate defect sites that assist in controlling the electrical conductivity.Another method of achieving p-type tin oxide is the fabrication of tin monoxide (SnO) which exhibits p-type conductivity and relatively high hole mobility. [16][17][18][19][20] et al. 17 have reported the relatively high Hall mobility of 2.4 cm 2 V −1 s −1 at room temperature and showed a possibility for p-channel oxide TFT applications. Liang, et al. 20 suggested that the p-type conductivity of SnO was originated from the tin vacancy, and it can be improved through appropriate doping. There have been a few studies on nitrogen-incorporated SnO 2 , but there has not been any study of nitrogen-incorporated SnO. This paper investigates the effect of nitrogen in the structure of SnO thin films.Nitrogen-incorporated SnO thin films on borosilicate substrates were prepared via reactive RF magnetron sputtering from a tin target (99.999%). The sputtering atmosphe...

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confidence: 97%

“…Few studies have been performed on the chemical state of nitrogen in SnO 2 . [12][13][14][15] Nitrogen can be incorporated as a pure tin oxide with few nitrogen substitutions as a tin nitride or as other tin oxide species which can generate defect sites that assist in controlling the electrical conductivity.…”

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confidence: 99%

P- to n-Type Conductivity Inversion of Nitrogen-Incorporated SnO Deposited via Sputtering

Kim

et al. 2012

ECS Solid State Letters

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“…However, we always obtained the tetragonal structure typical of SnO in our thin films. For SnO:N, we observed a shift of the (101) peak toward lower 2θ angles, which could be attributed to an increasing in the lattice parameter of the structure due to the replacement of oxygen atoms by the nitrogen ones in the SnO structure . Notice that the N atomic radius (1.71 Å) is larger than the O atomic radius (1.32 Å).…”

Section: Resultsmentioning

confidence: 77%

“…To reveal the oxidation state of tin, a Gaussian fitting of the Sn 3d peaks were performed. The Sn 3d 5/2 peak of the SnN x thin film (before annealing) deposited at RG pp = 7.2% exhibited 2 components, one at 485.7 eV corresponding to Sn 2+ and the other at 483.9 eV corresponding to metallic tin (see Figure ). The atomic concentrations obtained for the SnN x thin film (before annealing and deposited at RG pp = 7.2%) were 50.0%, 46.0%, and 4.0% for Sn, O, and N, respectively.…”

Section: Resultsmentioning

confidence: 98%

Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnN_x thin films

Garzón-Fontecha

Cruz

Quevedo

2017

Surface & Interface Analysis

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We present a study of electrical and optical properties of nitrogen-doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p-type thin films were a relative partial pressure between 7% and 11% (N 2 and/or O 2 ), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X-ray diffraction results showed that the asdeposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X-ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p-type carriers between 10 18 and 10 19 cm −3 , and a Hall mobility between 0.1 and 1.94 cm 2 V −1 s −1 . These thin films were used to fabricate p-type thin film transistors. the thin film crystalline phase, in contrast with larger ionic sizes which could modify this crystalline phase. The focus of this work is to synthesize and characterize p-type N-doped SnO thin films with tetragonal structure using the DC sputtering method. The resulting samples showed different electronic, electrical, and optical properties due to the nitrogen content, and they were used as transparent p-type semiconductors in the fabrication of TFTs. | EXPERIMENTAL DETAILSSnN x , SnO, and SnO x N y thin films were deposited on substrates of Corning 2948 glass (cleaned ultrasonically) by DC reactive magnetron sputtering using a tin target (purity of 99.99%). The deposition parameters used to grow the thin films were a working pressure of 1.8 mTorr, a plasma DC power of 30 W, and relative partial pressure of the reactive gas (RG pp ) between 6% and 17%. The relative partial pressure was calculated from the nitrogen (pN 2 ), oxygen (pO 2 ), and argon (pAr) partial pressures obtained from a residual gas analyzer and using the relation RG pp = (pN 2 + pO 2 )/(pAr + pN 2 + pO 2 ). The as-deposited thin films were oxidized by annealing in a tubular furnace at 250°C for 30 minutes under a continuous gas flow (90% of N 2 and 10% of O 2 ). Depending on the reactive gas, the thin films obtained after annealing were called SnO for oxygen (RG pp = O pp ), SnO:N for nitrogen (RG pp = N pp ), or SnN x O y for oxygen plus nitrogen (RG pp = N pp + O pp ). The crystalline structures of the samples were recorded by X-ray diffraction using a Rigaku Ultima III diffractometer operated at 45 kV and 40 mA with a Cu Kα = 1.5406 Å radiation source. The chemical states and presence of nitrogen in the films were determined by Xray photoelectron spectroscopy (XPS), using a VersaProbe II from PHI with a monochromatic Al Kα (1486.6 eV) radiation source. The charge effects in the XPS spectra were corrected using the value of the binding energy of carbon 1 second peak at 284.5 eV. The surface morphology of films was studied by an at...

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“…The (−111) diffraction peak of β‐Ga 2 O 3 :Nb thin film that annealed in N 2 is slightly stronger than those of others, indicating that trace amounts of N atoms may be incorporated on the lattice sites. As reported by Liu et al [22], Sun et al [5] and Kim et al [23], the incorporating of N atoms has an active effect on the crystalline quality of β‐Ga 2 O 3 :Nb films. Therefore, the observed slightly stronger diffraction peak in film annealed in N 2 indicates that annealing in N 2 and incorporating N atoms can improve the crystalline quality of films.…”

Section: Resultsmentioning

confidence: 78%

Effect of annealing atmosphere on the structural and optical properties of the Nb‐doped β‐Ga ₂ O ₃ films

Zhang

Deng

Kong

et al. 2019

Micro & Nano Letters

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The Nb-doped β-Ga 2 O 3 (β-Ga 2 O 3 :Nb) thin films have been deposited on the Si and quartz substrates by radio-frequency magnetron technique in argon ambient. The effects of annealing atmosphere on the structural and optical properties of β-Ga 2 O 3 :Nb thin films have been investigated. The crystallinity of β-Ga 2 O 3 :Nb film is improved obviously after annealing. An increase in surface roughness is observed on annealed films. The bandgap from 5.19 to 5.26 eV is obtained after annealing in different atmosphere, which is larger than the 5.09 eV before annealing. Moreover, the red-shift of photoluminescence emission peak is observed after annealing, and the annealing atmosphere has an influence on the peak intensity.

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Nitrogen-doped transparent tin oxide thin films deposited by sputtering

Cited by 14 publications

References 16 publications

P- to n-Type Conductivity Inversion of Nitrogen-Incorporated SnO Deposited via Sputtering

P- to n-Type Conductivity Inversion of Nitrogen-Incorporated SnO Deposited via Sputtering

Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnN_x thin films

Effect of annealing atmosphere on the structural and optical properties of the Nb‐doped β‐Ga ₂ O ₃ films

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Nitrogen-doped transparent tin oxide thin films deposited by sputtering

Cited by 14 publications

References 16 publications

P- to n-Type Conductivity Inversion of Nitrogen-Incorporated SnO Deposited via Sputtering

P- to n-Type Conductivity Inversion of Nitrogen-Incorporated SnO Deposited via Sputtering

Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

Effect of annealing atmosphere on the structural and optical properties of the Nb‐doped β‐Ga 2 O 3 films

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Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnN_x thin films

Effect of annealing atmosphere on the structural and optical properties of the Nb‐doped β‐Ga ₂ O ₃ films