Nitrogen-implanted Ge₂Sb₂Te₅film used as multilevel storage media for phase change random access memory

Abstract

Ge 2 Sb 2 Te 5 films were deposited by RF magnetron sputtering on Si(100)/SiO 2 substrates. N + ion was implanted into Ge 2 Sb 2 Te 5 films. Two obvious steps were observed in the resistance-temperature curve of the Ge 2 Sb 2 Te 5 -N film with a minor nitrogen implant dose. The two steps may change into one step because the phase transition from FCC to hexagonal structure was suppressed by nitrogen implantation if the nitrogen implant dose is higher than 4.51 × 10 16 cm −2 . The favourite nitrogen implant dose is about 6.44 × 10 15 to 1.92 × 10 16 cm −2 in our study. This phenomenon is very important for multilevel storage. Three-level storage with Ge 2 Sb 2 Te 5 -N media for chalcogenide random access memory (C-RAM) can be performed easily, and hence, the capacity of C-RAM will be dramatically increased.

Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory

“…This will regulate the resistance values of the PCM cells. [20] Our case is analogous, but will be more reproducible, in levels of resistance considering millions of cell in a cell array of real memory devices.…”

Training a Probabilistic Graphical Model With Resistive Switching Electronic Synapses

“…3(a). It is expected that achieving more gradual levels through device engineering [44][45][46] or a different programming scheme [44] can lead to better results in training. A better control of gradual conductance change also helps mitigate the impact of device-to-device variations during training, since the weight updates would take care of this type of variation through changing the weight accordingly [4].…”

Characteristics of phase transition in boron‐implanted Ge2Sb2Te5 thin films for phase change memory applications

“…[8][9][10][11][12][13] The addition of these atoms distorts the lattice cell and leads to an increase in lattice parameter. In contrast with the nitrogen-doped or oxygen-doped GST, the lattice parameter was expected to decrease with increasing the amount of boron in GST, which is evidenced by Fig.…”