Nitrogen in silicon: Transport and mechanical properties

Murphy, John D.; Alpass, C. R.; Giannattasio, A.; Senkader, S.; Falster, R.; Wilshaw, Peter R.

doi:10.1016/j.nimb.2006.10.023

Cited by 22 publications

(15 citation statements)

References 26 publications

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“…Therefore, a great deal of effort has been expended into the research of mechanical properties of silicon in the past decades. [1][2][3][4][5][6][7] Nevertheless, the understanding of mechanical properties is not yet as in-depth as that of electronic and optical properties for silicon. Hence, enriching the knowledge of mechanical properties of silicon is still stringent.…”

Section: Introductionmentioning

confidence: 99%

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

Yuan

Sun

et al. 2018

AIP Advances

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Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young’s modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young’s modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

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Section: Introductionmentioning

confidence: 99%

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

Yuan

Sun

et al. 2018

AIP Advances

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“…Dislocations in materials can be pinned by impurity atoms. [2][3][4]9,11,[18][19][20][21] The critical resolved shear stress necessary to unpin a dislocation from the locking impurity is known as the unlocking stress. By studying the unlocking stress as a function of annealing time and temperature it is possible to deduce information on impurity transport and impuritydislocation interactions.…”

Section: Introductionmentioning

confidence: 99%

“…By studying the unlocking stress as a function of annealing time and temperature it is possible to deduce information on impurity transport and impuritydislocation interactions. 4,9,11,18 This dislocation locking technique has previously been used to investigate the transport of oxygen in Cz-Si with a shallow dopant concentration of approximately 10 15 cm −3 ͑Ref. 4, 9, and 11͒ and nitrogen in float-zone silicon.…”

Section: Introductionmentioning

confidence: 99%

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon

Murphy

Wilshaw

Pygall

et al. 2006

Journal of Applied Physics

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The locking of dislocations by oxygen has been investigated experimentally in Czochralski silicon ͑Cz-Si͒ with different concentrations of shallow dopants. Specimens containing well-defined arrays of dislocation half-loops were subjected to isothermal anneals in the 350-550°C temperature range, and the stress required to bring about dislocation motion at 550°C was then measured. This dislocation unlocking stress was found to increase with annealing time due to oxygen diffusion to the dislocation core. The dislocation unlocking stress was measured in n-type Cz-Si with a high antimony doping level ͑ϳ3.4ϫ 10 18 cm −3 ͒ and p-type Cz-Si with a low boron doping level ͑ϳ1.3ϫ 10 15 cm −3 ͒. An analysis of the data taking the different oxygen concentrations into account showed that the rate of increase in dislocation unlocking stress was unaffected by the high level of antimony doping. This indicates that a high antimony doping level has no significant effect on oxygen transport for the conditions used in this experiment. However, in p-type Cz-Si with a high boron doping level ͑ϳ5.4ϫ 10 18 cm −3 ͒, the dislocation unlocking stress was found to rise at a much faster rate than in Cz-Si with a low boron doping level or high antimony doping level. This enhancement in dislocation locking was by a factor of approximately 60 at 400°C. By performing a numerical simulation to solve the diffusion equation for oxygen transport to a dislocation, the effective diffusivity of oxygen was deduced from the dislocation unlocking data to be 2.7 ϫ 10 −6 exp͑−1.4 eV/ kT͒ cm 2 s −1 in the highly boron doped Cz-Si. In the temperature range studied, the effective diffusion coefficient in the highly boron doped Cz-Si was found to be approximately 44 times higher than expected in low boron doped Cz-Si with an identical oxygen concentration.

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“…Etch pits are generally observed using an optical microscope (OM) [41] and sometimes using a scanning electron microscope (SEM) [42]. A software package to quantitatively measure dislocation density, developed at MIT [43], is freely available online at http://pv.mit.edu/dlcounting/.…”

Section: Dislocation Etching Processesmentioning

confidence: 99%