Noise and the Kelvin method

Baikie, Iain D.; MacKenzie, Susan; Estrup, P. J.; Meyer, Jacqueline

doi:10.1063/1.1142494

Cited by 177 publications

(78 citation statements)

References 48 publications

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“…The measurements of the charge deposited on the dielectric were performed using a modified version of the Scanning Kelvin Probe 3.1 by KP Technology Ltd., 65 and Baikie's method. 66 Mapping was performed using a nonfeedbacked XY stage actuated by stepper motors. Kelvin probe measurements had a $0.2 mm lateral resolution, and they were taken in the centre of the specimens, consequently they only represented a small region of surface charge.…”

Section: A Experimental Methodsmentioning

confidence: 99%

“…For high charge concentrations, V KP > 10 V, the accuracy of charge measurements using KP is reduced due to the high values of KP surface potential measured. When the KP potential measured is outside the bias range of the instrument (À10 V, 10 V), extrapolation is required as described by the Baikie method, 66 and the accuracy is reduced. However, the difference between modelled and measured Q f taken here is acceptable considering that the uniformity of the measured dielectric charge concentration was $3.5%, as reported previously for this set of specimens.…”

Section: à3mentioning

confidence: 99%

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On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

Wilshaw

2017

Journal of Applied Physics

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The recombination of electric charge carriers at semiconductor surfaces continues to be a limiting factor in achieving high performance optoelectronic devices, including solar cells, laser diodes, and photodetectors. The theoretical model and a solution algorithm for surface recombination have been previously reported. However, their successful application to experimental data for a wide range of both minority excess carrier concentrations and dielectric fixed charge densities has not previously been shown. Here, a parametrisation for the semiconductor-dielectric interface charge Qit is used in a Shockley-Read-Hall extended formalism to describe recombination at the c-Si/SiO2 interface, and estimate the physical parameters relating to the interface trap density Dit, and the electron and hole capture cross-sections σn and σp. This approach gives an excellent description of the experimental data without the need to invoke a surface damage region in the c-Si/SiO2 system. Band-gap tail states have been observed to limit strongly the effectiveness of field effect passivation. This approach provides a methodology to determine interface recombination parameters in any semiconductor-insulator system using macro scale measuring techniques.

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Section: A Experimental Methodsmentioning

confidence: 99%

Section: à3mentioning

confidence: 99%

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

Wilshaw

2017

Journal of Applied Physics

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“…KP is a powerful tool that allows to visualize the photogeneration and splitting of charges in nano-objects -having both electron acceptor and electron donor properties -through measurement of the electric potential at the surface (SP) resulting from the interaction between the tip and the sample. [53][54][55] Surface photovoltage (SPV), defined as the difference between the surface potential under illumination and in the dark, provides information about the charging/discharging and defect states of surface of semiconducting materials. It is noteworthy to remind that the p-n junction is not directly accessible and that the measured SPV corresponds to the photoinducted charge density variation measured at the external surface.…”

Section: Kelvin Probe Measurements (Kp)mentioning

confidence: 99%

Poly(3-hexylthiophene) Nanoparticles Containing Thiophene-S,S-dioxide: Tuning of Dimensions, Optical and Redox Properties, and Charge Separation under Illumination

et al. 2017

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We describe the preparation of poly(3-hexylthiophene-S,S-dioxide) nanoparticles using Rozen's reagent, HOF•CH 3 CN, either on poly(3-hexylthiophene) (P3HT) or on preformed P3HT nanoparticles (P3HT-NPs). In the latter case, core−shell nanoparticles (P3HT@PTDO-NPs) are formed, as confirmed by X-ray photoelectron spectroscopy measurements, indicating the presence of oxygen on the outer shell. The different preparation modalities lead to a finetuning of the chemical−physical properties of the nanoparticles. We show that absorption and photoluminescence features, electrochemical properties, size, and stability of colloidal solutions can be finely modulated by controlling the amount of oxygen present. Atomic force microscopy measurements on the nanoparticles obtained by a nanoprecipitation method from preoxidized P3HT (PTDO-NPs) display spherical morphology and dimensions down to 5 nm. Finally, Kelvin probe measurements show that the coexistence of p-and n-type charge carriers in all types of oxygenated nanoparticles makes them capable of generating and separating charge under illumination. Furthermore, in core−shell nanoparticles, the nanosegregation of the two materials, in different regions of the nanoparticles, allows a more efficient charge separation.

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“…In order to characterize the quality of the interface, effective lifetimes were recorded as the surface charge was modified using corona charging in a point-to-plane set-up with a 30 kV bias and 10 s intervals [17,18]. The resulting surface potentials were measured using Kelvin Probe.…”

Section: Resultsmentioning

confidence: 99%

A novel source of atomic hydrogen for passivation of defects in silicon

Hamer

Bourret‐Sicotte

Martins

et al. 2017

Physica Rapid Research Ltrs

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Palladium membranes have been used for decades for the separation of hydrogen from other gasses. In this letter the use of thin palladium leaves to act as sources of atomic hydrogen for silicon samples is explored. It has been assumed in the past that although hydrogen diffuses through palladium in atomic form, the atoms recombine to form molecular hydrogen at the surface. In this letter it is shown that hydrogen supplied to one surface of a palladium leaf can result in atomic hydrogen being released from the opposite surface at low pressure. This is demonstrated through the use of a palladium leaf in a direct plasma system which allows for atomic hydrogen to be supplied to a sample while avoiding exposure to UV radiation from the plasma and high energy charged particles. This method is shown to provide significant atomic hydrogen to silicon samples and improve passivation of silicon surfaces. Method of Shielded Hydrogen Passivation: Schematic of direct plasma chamber with a shield inserted between the plasma and the silicon sample.

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Noise and the Kelvin method

Cited by 177 publications

References 48 publications

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

Poly(3-hexylthiophene) Nanoparticles Containing Thiophene-S,S-dioxide: Tuning of Dimensions, Optical and Redox Properties, and Charge Separation under Illumination

A novel source of atomic hydrogen for passivation of defects in silicon

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