Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging

Orsal, B.; Peransin, J.M.; Daulasim, K.; Signoret, Philippe; Devoldére, P.; Robinet, M.; Fukuda, Mitsuo

doi:10.1117/12.146909

SPIE Proceedings

1993

DOI: 10.1117/12.146909

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Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging

B. Orsal

J.M. Peransin

K. Daulasim

et al.

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1/f noise analysis of 980 nm InGaAs/GaAs laser diodes below the lasing threshold

Chen

2020

Appl. Opt.

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We present a 1 / f noise model of 980 nm InGaAs/GaAs laser diodes (LDs) operated below the lasing threshold to study the correlation between 1 / f noise and fluctuation of surface nonradiative recombination current I n r . In InGaAs/GaAs LDs, nonradiative recombination current components have been identified as being primarily related to surface recombination, which depends on surface oxide traps and lattice dislocation. An analysis of the experimental comparison of I n r and 1 / f noise spectral density with constant current and temperature aging tests further shows the correlation and verifies the 1 / f noise model, which can be interpreted as a change in carriers and trap density of a certain surface. This model permits facet stability to be investigated.

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1/f noise analysis of 980 nm InGaAs/GaAs laser diodes below the lasing threshold

Chen

2020

Appl. Opt.

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show abstract

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Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging

Cited by 1 publication

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1/f noise analysis of 980 nm InGaAs/GaAs laser diodes below the lasing threshold

1/f noise analysis of 980 nm InGaAs/GaAs laser diodes below the lasing threshold

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