Noise performance of Gate engineered double gate MOSFETs for analog and RF applications

Analysis and Design of Tri-Gate MOSFET with High Dielectrics Gate

“…Here H is the width of the transistor and drain to source current is given by the equation: Here the current will be increased because the W/L ratio is imp roved due to addition of 2H and hence current characteristics will be imp roved. Now take the mobility electron in Galliu m Arsenide µ = 8500 cm 2 V -1 s -1 [5], the o xide capacitance C ox = 10.588 nF, then the value of µC ox = 90*10 -6 A/V 2 , the gate length of transistor is L = .045 μm and height H = 5 μm. Suppose the threshold voltage for transistor V t = 0.6 V and the gate to source voltage V gs = 1 V, 2 V and 3 V, then the equation for the drain to source current for normal gate transistor I ds will be g iven by the Equation ( 1) and taking the width of the gate of the transistor W = 22.5 μm.…”

“…We analyzed the results for the same values of parameters which we have chosen for the normal t ransistor and the width of the gate of the tri-gate transistor W = 22. 5…”

“…al. [5] has developed a model for the noise parameter such as power spectral density and noise figure can be improved with the help of technologies in good extent. The increased electron mob ility and velocity at channel surface due to dual gate material reduce effective electrical field at drain end, resulting in s maller DIBL and hot carrier effects [6].…”

Temperature dependence inflection point in Ultra-Thin Si directly on Insulator (SDOI) MOSFETs: An influence to key performance metrics

“…It also offers a very good option for analog and RF applications [15][16][17][18]. So far, very little work has been reported in the literature which prompted the authors for further investigation of the inflection point due to wide temperature for multi-gate technology.…”