Temperature dependence inflection point in Ultra-Thin Si directly on Insulator (SDOI) MOSFETs: An influence to key performance metrics

Impact of Structural Aspect, Metal Gate and Channel Material on UTB-SOI-MOSFET

“…Here the I D ~ V G characteristic curves have been obtained for each structure. The sub-threshold slope/sub-threshold swing has been calculated as per the following equation [15].…”

“…To meet the requirements of International Technology Roadmaps of semiconductors(ITRS),the structer had taken 45nm technology node [14]. According to ITRS [15] ,the drain bias can be considered as fixed i.e. supply voltage VDD=1V,VDS=0.5V(half of the VDD) [16] with variable to gate-source voltage (VGS) 0 V to 1.0 V to get the analog charcteristics of this simulated devices.The leakage curreent have been simulated using the Shockley Read Hall generation and recombination parameters [17][18].…”

“…The other material models may be parallel electric field dependent model like FLDMOB and concentration dependent model like CONMOB, which is required for measuring velocity saturation effect, Shockley-Read-Hall (SRH) and optical, have been used here for simulation [21], [12]. The model Fermi-Dirac helps to get the result close to ideal value by using Rational Chebyshev approximation [15]. For simulating the device having GaAs as channel material the Shockley-Read-Hall generation and recombination lifetime, n  and are set to the value 1 × 10 -8 .…”

Reliability analysis of charge plasma based double material gate oxide (DMGO) SiGe-on-insulator (SGOI) MOSFET

“…From previous investigations [14,15], it is desirable to bias the digital and analog circuits meant for low and high temperature applications at a point where the I-V characteristics show a little or no variation with respect to temperature. This point is typically known as zero temperature point (ZTC) point [16].…”

“…This point is typically known as zero temperature point (ZTC) point [16]. Mohapatra et al [15] and Sahu et al [14] have identified the ZTC bias point for single gate (SG), double gate (DG), and gate stack double gate (GS-DG) ultra-thin body (UTB) silicon on insulator (SOI) MOSFETs. This paper reveals a systematic analysis of ZTC point to examine the reliability issues over a wide temperature range (25-225°C) of the doping less DMGO SGOI MOSFET.…”