Non-aligned ZnO nanowires composited with reduced graphene oxide and single-walled carbon nanotubes for highly responsive UV–visible photodetectors

Room-temperature photodetectors and VOC sensors based on graphene oxide–ZnO nano-heterojunctions

“…Especially the last parameter quantitatively characterizes the photodetectors performances 33 . Photocurrent values are comparable with data reported in the literature for ZnO 33,62,63 and, among the investigated samples, 32:1 ZnO/GO shows the highest value followed digressively by ZnO and 4:1 ZnO/GO (Table 2, 3 rd column). In contrast to the other ZnO-GO composite materials, at a 32:1 ZnO/GO ratio, we observed that the dark-current is decreased while the photo-current is increased.…”

“…Among the investigated parameters, the responsivity achieved with the 32:1 ZnO/GO ratio is very high at around 33 AW -1 (Table 2 and Fig. 6a) with respect to the literature, while the detectivities (Table 2, 8 th column) are comparable to the most performing materials 33,62,63 . This photo-responsivity trend (32:1 ZnO/GO > ZnO > 4:1 ZnO/GO) and the very high figures of merit measured with the 32:1 ratio compound, suggest a potential enhancement mechanism for the chemical and UV light sensing.…”

“…In order to explain the synergistic effect between graphene oxide and zinc oxide, characterization of the photocurrent under UV light exposure was carried out. Chen et al 62 have demonstrated the incorporation of lowdimensional carbon material into ZnO nanowires effectively enhances the separation efficiency of photo-generated electron-hole pairs, providing efficient carrier transport pathways. They stated rGO/ZnO-based photodetector has high photoresponsivity (∼16 A•W -1 ), high on/off current ratio (2.81 × 10 4 ) and great specific detectivity (1.14 × 10 14 Jones), under low UV irradiation (< 10 μW•cm -2 ) and at 1.0 V bias.…”

Enhanced performance of ZnO nanorod array/CuSCN ultraviolet photodetectors with functionalized graphene layers

“…Self-powered ZnO UV PDs have previously been reported, including homojunctions and heterojunctions. [16][17][18][19] p-Type ZnO is necessary to fabricate a homogeneous p-n junction photodiode. However, owing to the low solubility of the chosen dopant, strong lattice relaxation and self-compensation effect, it remains a challenge to obtain stable p-type ZnO by incorporating acceptor defects effectively.…”

Study of the Optoelectronic Properties of Ultraviolet Photodetectors Based on Zn‐Doped CuGaO2 Nanoplate/ZnO Nanowire Heterojunctions

“…[26] In contrast to CGO, n-type zinc oxide (ZnO) has a wide direct bandgap (3.37 eV) and large exciton binding energy (60 meV) at room temperature. [27][28][29] In the UV optical detection system, [30] when 1D ZnO nanowires (NWs) were combined with other low-dimensional materials such as metals, semiconductor nanoparticles, and 1D nanotubes and 2D materials, [31] the increase of the specific surface area improves the detection performance. Considering the high matching lattice parameters between ZnO and CGO (the lattice mismatch is %10%), it is feasible to form a heterogeneous relationship at the interface.…”