Non-Contact Doping Profiling in Epitaxial SiC

Savtchouk, Alexandre; Oborina, E.; Hoff, Andrew; Łagowski, J.

doi:10.4028/www.scientific.net/msf.457-460.755

Cited by 8 publications

(7 citation statements)

References 1 publication

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“…The non-contact, preparation free corona-Kelvin technique is commonly used to characterize dielectric layers on silicon wafers [6,7]. The corona-Kelvin technique was first applied in 2003 to characterize doping in SiC [3]. Since SiC is a wide bandgap semiconductor, minority carrier generation is negligible.…”

Section: Corona-kelvin Techniquementioning

confidence: 99%

“…For dopant depth profiling the corona charge differential capacitance method, d(1/C 2 )/dV, is used. However for quick measurements of average dopant concentration and full wafer mapping, the unique Q 2 -V method may be used as discussed in reference [3] and the original patent [8].…”

Section: Contributed Articlementioning

confidence: 99%

“…In this work we present measurement of SiC dopant profiles extracted from CV characteristics generated using the non-contact corona-Kelvin approach. The technique is a refinement of our previous work [3] done in order to achieve high precision in high depletion voltage range for dopant profiling. It is non-destructive, does not require fab-rication of test diodes or contacts and provides rapid, inline feedback.…”

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confidence: 99%

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Non‐contact high precision alternative to Hg‐probe for dopant profiling in SiC

Czett

Buday

Savtchouk³

et al. 2014

Phys. Status Solidi C

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The silicon carbide industry has been expanding in the recent years, producing a search for SiC non‐contact electrical characterization methods capable of replacing the commonly used Hg‐probe technique. In this work we present doping metrology based on the corona‐Kelvin method, which was originally developed and used for silicon IC dielectric and interface characterization. The method employs corona discharge in air to deposit precise doses of charge on the SiC surface. The corresponding depletion voltage is then measured with a Kelvin probe enabling non‐contact determination of the static charge‐voltage and capacitance‐voltage characteristics. The approach incorporates three novel elements: 1. corona charging of SiC to high depletion voltage with constant surface potential method; 2. the derivative charge‐voltage measurements for d(1/C2)/dV analysis and doping profiling; 3. surface charge neutralization with appropriate SiC illumination for repeated measurements. We demonstrate excellent repeatability and accuracy of the novel approach for n and p‐type SiC doping measurements in a range from 1014cm‐3 to mid 1018cm‐3 and excellent correlation with results obtained with mercury‐probe C‐V. Using multi‐layer epitaxial SiC structures, we further demonstrate the effectiveness of novel non‐contact depth profiling. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Corona-kelvin Techniquementioning

confidence: 99%

Section: Contributed Articlementioning

confidence: 99%

mentioning

confidence: 99%

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Non‐contact high precision alternative to Hg‐probe for dopant profiling in SiC

Czett

Buday

Savtchouk³

et al. 2014

Phys. Status Solidi C

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“…Ideally, wide bandgap SiC charged to depletion should exhibit good retention of corona ions. This condition is needed for doping measurement based on multiple corona charging pulses, where each pulse shall be followed by surface voltage measurement without meaningful charge neutralization [1][2]. In a large series of testing, we have indeed found that good quality epitaxial SiC charged to depletion can retain corona charge in the dark even for 24h without measureable loss.…”

Section: Introductionmentioning

confidence: 95%

Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC

Wilson

Savtchouk

Findlay

et al. 2016

MSF

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Kelvin-probe surface voltage mapping, SVM, on epitaxial SiC, charged with corona into deep depletion, reveals SV defects manifested as spots with decreased surface voltage. For 150μm thick epi-layer, SV defects coincide with low carrier lifetime spots revealed by microwave detected photoconductance decay, μPCD. In the photoluminescence image, these defects are seen as triangular dark spots, described in literature as stacking-fault related triangular defects. For thin epi-layers (2.2μm), defects are visible only in SVM. In this case, high resolution SVM performed with Kelvin Force Microscopy identifies a triangular defect shape. Two mechanisms are proposed, accounting for SV defects. For high intensity defects exhibiting large magnitude fast decreasing voltage, the probable mechanism is defect related leakage; causing neutralization of corona surface ions. Low intensity defects can be explained considering deep level emission. The latter mechanism has been investigated using SV transient and spectral analysis analogous to isothermal DLTS and Laplace DLTS.

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“…For simplicity the technique is referred to as "corona-Kelvin". Its application to SiC was reported in 2004 [2]. The bare epi-surfaces in depletion were found to have excellent corona charge retention as theoretically expected for wide-bandgap semiconductors.…”

Section: Introductionmentioning

confidence: 70%

Accurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CV

Savtchouk

Wilson

Łagowski

et al. 2016

MSF

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We present a refined non-contact doping density determination in silicon carbide that incorporates 3 novel features: (1) constant surface potential method of corona charging into depletion; (2) vibrating Kelvin probe measurement of depletion surface voltage and voltage compensation maintaining constant surface potential, and (3) a unique self-consistent procedure for data analysis. The results obtained on epitaxial SiC demonstrate up to 3 times improved accuracy and enhanced repeatability giving 1σ in 10 repeats of 0.05% and 0.1% for doping in e15cm-3 and e19cm-3 range, respectively. An enhanced charging range enables measurement of high doping density in the e19cm-3 range and to achieve larger depth in doping profiling. With these refinements, a non-contact doping metrology for SiC represents an industry ready alternative to Hg-CV.

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Non-Contact Doping Profiling in Epitaxial SiC

Cited by 8 publications

References 1 publication

Non‐contact high precision alternative to Hg‐probe for dopant profiling in SiC

Non‐contact high precision alternative to Hg‐probe for dopant profiling in SiC

Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC

Accurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CV

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