2006
DOI: 10.1116/1.2137334
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Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions

Abstract: Articles you may be interested inEffects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO 3 substrate

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Cited by 28 publications
(13 citation statements)
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“…The detection accuracy of the transmissivity was ± 0.1% using the present system [14]. The sheet resistance was measured using Frontier Semiconductor RsL300 noncontact photovoltage-based equipment [15]. The wavelength and Rs frequency of the modulated LED were 700 nm and 100 kHz respectively.…”
Section: Methodsmentioning
confidence: 99%
“…The detection accuracy of the transmissivity was ± 0.1% using the present system [14]. The sheet resistance was measured using Frontier Semiconductor RsL300 noncontact photovoltage-based equipment [15]. The wavelength and Rs frequency of the modulated LED were 700 nm and 100 kHz respectively.…”
Section: Methodsmentioning
confidence: 99%
“…Next, let us consider the zero-penetration/non-contact techniques: (i) the elastic metal four point probe (EMP) from Solid State Measurements [7], (ii) the micro four point probe (M4PP) tool from CAPRES [8] and (iii) the sheet resistance and leakage (RsL) tool from Frontier Semiconductor [9]. EMP is a four point probe tool based on the usage of relatively large metal probes (load=25 g, contact size=30-50 µm, separation=1.8 mm), which make only an elastic contact with the sample/wafer, i.e.…”
Section: Sheet Resistancementioning
confidence: 99%
“…Excellent correlation of the contact-less RsL technique with contact four-point probe (4PP) measurements was demonstrated for deep (>50 nm) p-n junctions with low-leakage currents [2]. In the case of USJs formed in heavily-doped regions, e.g., halo or well, no correlation between RsL and 4PP measurements was observed due to probe penetration damage and high p-n junction leakage current [2,4].…”
Section: Introductionmentioning
confidence: 98%
“…Junction photo-voltage (JPV) measurements of carrier spreading and recombination in p-n junctions provide a non-contact method for evaluation of sheet resistance (Rs) and leakage current (Io) [1,2]. The range of Rs measurements span implant doses from threshold adjust (≈10 11 ions/cm 2 ) to source-drain doping (≈10 15 ions/cm 2 ), including accurate evaluations of shallowextension (≈10 nm) junctions in halo/well profiles [3].…”
Section: Introductionmentioning
confidence: 99%