Noncrystalline Structure and Electronic Conduction of Silicon Dioxide Films

Revesz, A. G.

doi:10.1002/pssb.19670240112

Cited by 48 publications

(14 citation statements)

References 32 publications

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“…The analysis has been also applied to various noncrystalline solids [14]. An important result was that, in accordance with an earlier suggestion [15], NC solids form two main groups: 1. vitreous and 2. amorphous. The f values characteristic of the vitreous group are almost the same as for the corresponding crystal while those characteristic of the amorphous group are less [13].…”

Section: (1)supporting

confidence: 52%

The Optical Properties of Noncrystalline Silicon and Si1−xHx Films

Revesz¹,

Wemple²

1982

phys. stat. sol. (a)

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The optical properties of noncrystalline (NC) silicon and Si1−xHx films are analyzed in terms of single average excitation energy, Eo(Si), and normalized macroscopic' oscillator strength, f(Si), of the Si network; the latter is an indicator of bond orbital delocalization and short range order (SRO) in the NC Si network. In general, the Si network can be viewed as a mixture of four‐fold coordinated local configurations the extremes of which resemble the diamond type (d‐Si) and the high density b.c.c. (b‐Si) polymorphs. Higher deposition temperatures (e.g. chemically deposited “CVD” NC Si films) favor the increased SRO of the b‐Si configuration as evidenced by values of f(Si) which fall close to that characterizing crystalline Si. The NC network resembling d‐Si in vacuum‐deposited or sputtered NC films, on the other hand, yields more localized bonds with reduced SRO and f(Si) values. The effect of hydrogen in Si1−xHx is more complex than simple saturation of dangling bonds. The Si‐H bonds modify the NC Si network so that the Eo(Si) value increases with hydrogen content. Also, the Si network probably develops more SRO as a result of hydrogen incorporation since the f(Si) values are higher (i.e., more crystalline‐like) for Si1−xHx than for vacuum‐deposited or sputtered NC Si films.

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Section: (1)supporting

confidence: 52%

The Optical Properties of Noncrystalline Silicon and Si1−xHx Films

Revesz¹,

Wemple²

1982

phys. stat. sol. (a)

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“…S-0-Si.. . chains via .n-electron overlap was originally suggested for S i 0 (Dearnaley 1967, Revesz 1967, but clearly this cannot be extended to all the systems which exhibit forming. A defect configuration, .…”

Section: Models Of the Forming Processmentioning

confidence: 98%

Electrical phenomena in amorphous oxide films

1970

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“…In this case, the spacecharge-limited electronic current density is derived to be V m J~ = Kv-- [17] Xo 2m K and m are constants defined in Appendix A and v is the velocity of electrons due to the applied voltage V across the thin film with thickness • The value of m = 0.3 is given in Ref. (30) for the anodic oxidation of silicon at constant voltage. From Eq.…”

Section: Theoretical Modelmentioning

confidence: 99%

Theoretical Model of the Anodic Oxidation Growth Kinetics of Si at Constant Voltage

Ghowsi

Gale

1989

J. Electrochem. Soc.

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An analytical model for the growth kinetics of the anodic oxidation of Si is developed, in which oxidant anions are drifted across the as-grown SiO2 by the electric field from an applied constant voltage. Literature evidence for an anionic transport mechanism is reviewed. The theoretical model derived for the film growth rate is consistent with an empirical relation due to Jain et al., r(t) = at 1/2 + ro, where r(t) represents the oxide thickness as a function of time, and a and ro are constants (3). The net anion mobility was calculated using the model and earlier experimental results. Electronic current density, the major total current component, is shown to be nonohmic and space charge limited. Equations are derived, each as a function of time, for the total current density, the electronic current density, and the ionic efficiency during anodic oxidation. These theoretical predictions are in good agreement with the available experimental data.At present, the technique most commonly used for fabrication of SiO2 films in electronic devices has been the thermal oxidation of silicon. On the other hand, oxide films can be grown on silicon by an electrochemical process (1-4). The electrochemical process has a number of advantages, low cost and the use of room temperature, which makes this process a very good candidate for growing insulator layers on hydrogenated amorphous silicon films. Amorphous Si:H films are unstable at high temperature (above 300~176 since the H evolves and causes the films to lose their desirable properties. Oxide insulation layers are also used to make low-cost, high-efficiency solar cells and integrated thin film transistor arrays (TFT) for image sensor and large-area liquid displays (5, 6). Another potential application is growing very thin silicon dioxide layers (20-200A) for short channel MOSFET and EPROM devices (7). Many theoretical papers, e.g., (8)(9)(10)(11)(12)(13)(14), in addition to experimental investigations, e.g., (15-28), have followed the original work by Cabrera and Mott (8); however, still more work is necessary for a complete understanding and adequate control of the anodic process.In this paper, an anlaytical model for the constant voltage anodic oxidation of silicon has been developed. The experimental results and an empirical relation found by Jain et al.(3) are compared with the theoretical growth rate equations. Theoretical ModelTwo basic steps for the constant voltage anodic oxidation of Si are illustrated in Fig. 1. First, it is assumed that the anions are transported across the oxide film and, second, that the anions react with the silicon surface.The first assumption of this model is that anions are the dominant species moving across the oxide. It has been a controversial issue for the anodic oxidation of silicon whether, during growth, the cation, the anion, or both, are moved across the thickening oxide film. Schmidt and Owen (1) labeled an oxide film on silicon by anodizing it in tetrahydrofurfuryl alcohol containing 32p as phosphate. When this radioactive film ...

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Noncrystalline Structure and Electronic Conduction of Silicon Dioxide Films

Cited by 48 publications

References 32 publications

The Optical Properties of Noncrystalline Silicon and Si1−xHx Films

The Optical Properties of Noncrystalline Silicon and Si1−xHx Films

Electrical phenomena in amorphous oxide films

Theoretical Model of the Anodic Oxidation Growth Kinetics of Si at Constant Voltage

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