Nonlinear electric field effect on perpendicular magnetic anisotropy in Fe/MgO interfaces

Xiang, Qingyi; Wen, Zhenchao; Sukegawa, Hiroaki; Kasai, S.; Seki, Takeshi; Kubota, Takahide; Takanashi, Kōki; Mitani, Seiji

doi:10.1088/1361-6463/aa87ab

Cited by 33 publications

(24 citation statements)

References 37 publications

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“…In addition to ultrathin epitaxial films with large PMA [35,59,60,61,62,63,64,65,66,67], VCMA effects have been observed in various materials systems, for example, in sputter-deposited CoFeB [68,69,70,71,72,73,74,75,76,77,78,79,80,81], which is an important practical material that is used in the mass production of MTJs, and in self-assembled nano-islands [82], nanocomposite structures [83], and ultrathin layers with quantum well states [84]. The VCMA effect can also be applied for the control of domain wall motion [85,86,87] and magnetic skyrmions [88,89,90].…”

Section: Overview Of the Vcma Effect And Voltage-induced Dynamic Smentioning

confidence: 99%

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

et al. 2019

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The electron spin degree of freedom can provide the functionality of “nonvolatility” in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power. With the present technology, an electrical current is required to control the direction and dynamics of the spin. This consumes high energy when compared with electric-field controlled devices, such as those that are used in the semiconductor industry. A novel approach to overcome this problem is to use the voltage-controlled magnetic anisotropy (VCMA) effect, which draws attention to the development of a new type of MRAM that is controlled by voltage (voltage-torque MRAM). This paper reviews recent progress in experimental demonstrations of the VCMA effect. First, we present an overview of the early experimental observations of the VCMA effect in all-solid state devices, and follow this with an introduction of the concept of the voltage-induced dynamic switching technique. Subsequently, we describe recent progress in understanding of physical origin of the VCMA effect. Finally, new materials research to realize a highly-efficient VCMA effect and the verification of reliable voltage-induced dynamic switching with a low write error rate are introduced, followed by a discussion of the technical challenges that will be encountered in the future development of voltage-torque MRAM.

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Section: Overview Of the Vcma Effect And Voltage-induced Dynamic Smentioning

confidence: 99%

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

et al. 2019

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“…These correspond to +0.44 and −2.16 erg/cm 2 (≡ mJ/m 2 ). The electrons depletion increased the out-of-plane MAE, same as the interfaces of Fe/MgO[37][38][39][40][41][42][43] and (Fe,Co)/Pt/MgO…”

mentioning

confidence: 85%

Large nonvolatile control of interfacial magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier

et al. 2019

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The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolatile control of magnetic anisotropy in ferromagnetic/ferroelectric CoPt/ZnO interface. Using the switched electric polarization of ZnO, the density-of-states and magnetic anisotropy at the CoPt surface show a large change. Due to a strong Co/Pt orbitals hybridization and a large spin-orbit coupling, a large control of magnetic anisotropy was found. We experimentally measured the change of effective anisotropy by tunneling resistance measurements in CoPt/Mg-doped ZnO/Co junctions.Additionally, we corroborate the origin of the control of magnetic anisotropy by observations on tunneling anisotropic magnetoresistance. 77.55.hf,77.55.fp,85.30.Mn

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“…For example, Noguchi et al reported VC-MRAM circuits for ultralarge last level cache memory, in which the voltage to switch the magnetization is as high as 2.2 V [10], which is larger than the standard CMOS power-supply voltage of less than 1.2 V. The necessity of such a large voltage originates from limited amounts of anisotropy modulation coefficients by E-field. To overcome this issue, the material development of the free-layer material is now underway [88][89][90][91][92]. Another issue to be addressed is the small time window for the writing.…”

Section: Progress Of Vc-mrammentioning

confidence: 99%

A Recent Progress of Spintronics Devices for Integrated Circuit Applications

Endoh

Honjo

2018

JLPEA

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Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operation capability in addition to their high-endurance feature. There are three types of spintronics devices with different writing schemes: spin-transfer torque (STT), spin-orbit torque (SOT), and electric field (E-field) effect on magnetic anisotropy. The NV memories using STT have been studied and developed most actively and are about to enter into the market by major semiconductor foundry companies. On the other hand, a development of the NV memories using other writing schemes are now underway. In this review article, first, the recent advancement of the spintronics device using STT and the NV memories using them are reviewed. Next, spintronics devices using the other two writing schemes (SOT and E-field) are briefly reviewed, including issues to be addressed for the NV memories application.

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Nonlinear electric field effect on perpendicular magnetic anisotropy in Fe/MgO interfaces

Cited by 33 publications

References 37 publications

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

Large nonvolatile control of interfacial magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier

A Recent Progress of Spintronics Devices for Integrated Circuit Applications

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