Nonlinear piezoresistance effects in silicon

Matsuda, Kazunori; Suzuki, Kohei; Yamamura, K.; Kanda, Yozo

doi:10.1063/1.353169

Cited by 131 publications

(66 citation statements)

References 17 publications

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“…144,147 The piezoresistance coefficients depend on the impurity type and concentration. In conventional layout (Manhattan style), most transistors are built for h ¼ 45…”

Section: A Stress Effects In Bulk Simentioning

confidence: 99%

“…For the (001) Si-surface (which is prevalent in the microelectronics industry) and in-plane uniaxial stress, the 1st order piezoresistive tensor reduces to three independent piezoresistive coefficients (P 144,145 and the 2nd order piezoresistive tensor reduces to nine. 146,147 For low stresses ( 500 MPa), the higher-order terms are usually neglected. P (jh À uj ¼ 90 ) are the longitudinal and transverse piezoresistive coefficients.…”

Section: A Stress Effects In Bulk Simentioning

confidence: 99%

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Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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Electronics that conform to 3D surfaces are attracting wider attention from both academia and industry. The research in the field has, thus far, focused primarily on showcasing the efficacy of various materials and fabrication methods for electronic/sensing devices on flexible substrates. As the device response changes are bound to change with stresses induced by bending, the next step will be to develop the capacity to predict the response of flexible systems under various bending conditions. This paper comprehensively reviews the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic). The discussion also includes variations in the device response due to crystal orientation, applied mechanics, band structure, and fabrication processes. Further, strategies for compensating or minimizing these bending-induced variations have been presented. Following the in-depth analysis, this paper proposes new mathematical relations to simulate and predict the device response under various bending conditions. These mathematical relations have also been used to develop new compact models that have been verified by comparing simulation results with the experimental values reported in the recent literature. These advances will enable next generation computer-aided-design tools to meet the future design needs in flexible electronics.

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“…144,147 The piezoresistance coefficients depend on the impurity type and concentration. In conventional layout (Manhattan style), most transistors are built for h ¼ 45…”

Section: A Stress Effects In Bulk Simentioning

confidence: 99%

Section: A Stress Effects In Bulk Simentioning

confidence: 99%

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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“…Piezoresistivity is only linear for small deformation, and prior work 16,17 has shown that a nonlinear deviation of 1% occurs at ξ pr = 139 MPa of stress in an ntype piezoresistor strained longitudinally. This nonlinearity implies a maximum force of…”

Section: A Piezoresistive Cantilevers Performancementioning

confidence: 99%

Piezoresistive cantilever force-clamp system

Park

Petzold

Goodman

et al. 2011

Review of Scientific Instruments

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We present a microelectromechanical device-based tool, namely, a force-clamp system that sets or "clamps" the scaled force and can apply designed loading profiles (e.g., constant, sinusoidal) of a desired magnitude. The system implements a piezoresistive cantilever as a force sensor and the builtin capacitive sensor of a piezoelectric actuator as a displacement sensor, such that sample indentation depth can be directly calculated from the force and displacement signals. A programmable realtime controller operating at 100 kHz feedback calculates the driving voltage of the actuator. The system has two distinct modes: a force-clamp mode that controls the force applied to a sample and a displacement-clamp mode that controls the moving distance of the actuator. We demonstrate that the system has a large dynamic range (sub-nN up to tens of μN force and nm up to tens of μm displacement) in both air and water, and excellent dynamic response (fast response time, <2 ms and large bandwidth, 1 Hz up to 1 kHz). In addition, the system has been specifically designed to be integrated with other instruments such as a microscope with patch-clamp electronics. We demonstrate the capabilities of the system by using it to calibrate the stiffness and sensitivity of an electrostatic actuator and to measure the mechanics of a living, freely moving Caenorhabditis elegans nematode.

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“…where l π and t π are the longitudinal and transverse coefficients respectively [16], β is the temperature coefficient of piezoresistance and is negative and is reported to be identical for both the coefficients [16] l σ and t σ are the longitudinal and transverse stresses respectively which are dependent on applied pressure and membrane dimensions [16]. β is typically of the order of -0.0032/ O C. The values of piezoresistive coefficients are taken from [17] for computing the changed value of resistance.…”

Section: Analytical Modelmentioning

confidence: 99%

Thermal Effects in Design of Integrated CMOS MEMS High Resolution Pressure Sensor

RoyChaudhuri

Datta

Saha

2009

International Journal on Smart Sensing and Intelligent Systems

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Abstract-Thermal effects in integrated piezoresistive MEMS pressure sensor may be a problem of concern in design for applications requiring high precision measurements and in continuously monitoring array of sensor network. It not only results in the shift of the offset voltage of the pressure sensor but also affects the performance of the adjacent CMOS circuit leading to erroneous values. To address this problem, the thermal effects of the integrated sensor chip along with its packaging arising out of the self heating of piezoresistors has been analyzed through a simple heat balance model which has been validated by FEM analysis and laboratory experiment. It is observed that for a typical packaged pressure sensor of 5.6mm by 5.6mm and heat transfer coefficient of 100Wm -2 K -1 , thermal effect may lead to a temperature rise of around 5 0 C whereas for a high precision application of pressure sensor even 1-2 0 C of temperature rise may lead to significant error. A methodology of co-design and a new MOS library called PTMOS for direct integration of these thermal effects of MEMS piezoresistors in the CMOS circuit has also been presented to reduce considerably the design cycle time of the integrated sensor. This integrated analysis thus helps in proper selection of the dimensions and packaging of the integrated sensor chip taking into account the thermal effects for the optimization of its space constraint and its performance with reduced design cycle time.

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Nonlinear piezoresistance effects in silicon

Cited by 131 publications

References 17 publications

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Piezoresistive cantilever force-clamp system

Thermal Effects in Design of Integrated CMOS MEMS High Resolution Pressure Sensor

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