Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer

Yuan, Xin-Cai; Wei, Xianhua; Dai, Bo; Zeng, Hongxin

doi:10.1016/j.apsusc.2015.11.159

Cited by 14 publications

(12 citation statements)

References 30 publications

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“…4a, the formation of interfacial AlO x layer should be considered due to a lower standard Gibbs free energy for the formation of Al 2 O 3 (−1582.3 kJ/mol) than that of ZnO (−320.5 kJ/mol) [3]. Similar interface diffusion can also be found between Al and NiO, SnO, Pr 0.7 Ca 0.3 MnO 3 , which has been confirmed by X-ray photoemission spectrum [30,[32][33][34]. Due to the presence of the interface layer, the initial resistance of Al/ZnO/NiO/ITO is larger than that of Au/ ZnO/NiO/ITO.…”

Section: Resultssupporting

confidence: 62%

“…It reveals that the amplitude of applied voltage should play a decisive role in determining the transport properties of n-ZnO/p-NiO junction. Similar effect has also been observed in the Al/NiO/ITO structure, in which nonlinear and linear resistive switching can be found at low and high bias, respectively [30]. Furthermore, different conduction mechanisms have been demonstrated.…”

Section: Resultsmentioning

confidence: 53%

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Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

Yuan

Chen

et al. 2017

J Sol-Gel Sci Technol

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The n-ZnO/p-NiO junctions have been fabricated by sol-gel method using Al as top electrodes and ITO as bottom electrodes for applications in resistive switching devices. Such devices exhibit homogenous and filamentary characteristics depending on the amplitude of applied bias. The two switching types show different switching polarities and transport mechanisms. Under a higher bias, the filamentary behavior is dominated by Ohmic conduction at low resistance state and trap related Poole-Frenkel conduction at high resistance state, while under a lower bias the homogenous switching exhibits diode conduction at high resistance state and space charge limited current at low resistance state. The homogenous switching shows selfrectifying effect with a good endurance. It may open up a simple route to suppress the sneak current in a p-oxide/noxide device while maintaining reasonable good resistive switching and self-rectifying properties. Graphical AbstractKeywords Resistive random access memory • Resistive switching • Self-rectifying • n-ZnO/p-NiO

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Section: Resultssupporting

confidence: 62%

Section: Resultsmentioning

confidence: 53%

Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

Yuan

Chen

et al. 2017

J Sol-Gel Sci Technol

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“…In our previous reports, effect of the interface layer between oxide and Al electrode on resistive switching of Al/NiO/ITO should be considered 15 16 . Similarly, there should be an ultra-thin AlO x layer existed at the Al/ITO interface due to the standard Gibbs free energy of formation of oxides of metals.…”

Section: Resultsmentioning

confidence: 99%

Point contact resistive switching memory based on self-formed interface of Al/ITO

Qiu

Wei

et al. 2016

Sci Rep

Self Cite

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Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed exhibits typical symmetrical BRS without an initiation or electroforming process. This can be ascribed to the ex-situ thickening of the interfacial layer (≈9.2 nm) to achieve the stable HRS after heat treatment. This work suggests that the self-formed interface of active Al electrode/ITO would provide the simplest geometry to construct RRAM.

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“… 5,8 We have reported the bipolar resistive switching (BRS) behavior of Al/NiO/ITO (ITO: Indium Tin Oxide) without electroforming. 8 It is nonlinear since the conduction is dominated by oxygen vacancy drift across the interface. Unfortunately, the ON/OFF ratio in the electroforming-free device is smaller compared with the counterpart after electroforming.…”

Section: Introductionmentioning

confidence: 99%

“…Resistive switching behaviors of NiO films have shown multiple modes, depending on electrode materials, operating voltage, and electroforming process. 8,20–22 In this work, we adopted Mn doping to modulate the electrical properties which can effectively improve the switching performance of NiO films. Furthermore, the switching mechanisms were discussed.…”

Section: Introductionmentioning

confidence: 99%