The strain distribution and electronic structures of the InAs/GaAs quantum ring molecule are calculated via the finite element method. In our model, three identical InAs quantum rings are aligned vertically and embedded in the cubic GaAs barrier. Considering the band edge modification induced by the strain, the electronic ground state and the dependence of ground state energy on geometric parameters of the quantum ring molecule are investigated. The change of localization of the wavefunction resulting from the applied electric field along the growth direction is observed. The ground state energy decreases as the electric field intensity increases in a parabolic-like mode. The electric field changes the monotonic dependence of the energy level on the inter-ring distance into a non-monotonic one. However, the electric field has no effect on the relationships between the energy level and other geometric parameters such as the inner radius and outer radius. strain distribution, electronic structure, quantum ring molecule, applied electric field PACS: 68.65.Hb, 73.21.La, 81.40.JjNanostructures such as quantum dots and quantum rings have been subjects of great interests for their application in optoelectronic devices [1][2][3][4][5]. Besides the single nanostructure, artificial molecules consisting of quantum dots or rings are particularly attractive because they are promising in quantum information processing [6] and terahertz devices [7]. Recently, the coupled quantum dot molecules and quantum ring molecules have been produced by many groups [8][9][10][11]. For these nanostructures, the formation, evolution and photoluminescence are experimentally studied [8,12,13] while the electronic structures and excitonic properties are theoretically calculated [14-16]. In particular, within the above works, Granados et al. studied the vertical order and the optical properties of stacked quantum rings composed of three layers [8]. Excitonic properties of vertical coupled In(Ga)As/GaAs triple quantum ring molecule [15] and InP/InGaP triple quantum dot molecule [16] theoretically studied by Tadić et al. are also of great interests.In the growth of vertically-stacked lattice-mismatched heterostructures, such as InAs/GaAs quantum dots or rings, the strain plays an important role in aligning the dots or rings in different layers. Compared with a quantum well superlattice, the strain in stacked quantum dots or rings is non-uniform and penetrates into the barrier, which has notable effects on electronic structures. Besides the quantum confinement and the strain distribution, external potential is another factor that determines the energy levels of the electron or hole in the heterostructure. When the heterostructure is placed in an electric or magnetic field with a certain intensity, the bound state energies of the electron and hole will change considerably. Moreover, the Stark effect [17,18] or the Aharonov-Bohm oscillation [19,20] can be observed by applying an electric or magnetic field, respectively.In this article, we investigate ...