Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)

Tschumak, E.; Granzner, Ralf; Lindner, J.K.N.; Schwierz, Frank; Lischka, K.; Nagasawa, Hiroyuki; Abe, Masayuki; As, D. J.

doi:10.1063/1.3455066

Cited by 25 publications

(19 citation statements)

References 19 publications

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“…4) and c-AlN (Ref. 5) has pushed the development of electronic and optoelectronic devices, such as heterojunction field-effect transistors, 6 resonant tunneling diodes, 7 and QWIPs 8 based on zinc-blende group-III nitrides. Furthermore, the tunability of ISBTs from mid-to far-infrared regions in cubic GaN/AlN SLs has been shown.…”

Section: Introductionmentioning

confidence: 99%

Band offsets in cubic GaN/AlN superlattices

et al. 2011

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The presently unknown band offset in nonpolar cubic GaN/AlN superlattices is investigated by inter-sub-band and interband spectroscopies as well as ab initio calculations. On one hand, the conduction-band offset (CBO) has been determined from the comparison of the measured transition energies with model calculations within the effective mass approximation. On the other hand, the valence-band offset (VBO) and the CBO are accurately simulated by calculating many-body corrections within the GW approximation on top of hybrid-functional density functional theory calculations. Thus, a CBO of (1.4 ± 0.1) eV and a VBO of (0.5 ± 0.1) eV is obtained as a result of both approaches.

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Section: Introductionmentioning

confidence: 99%

Band offsets in cubic GaN/AlN superlattices

et al. 2011

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“…These include, among others, light emitting diodes (LEDs), laser diodes (LDs), heterojuction field-effect transistors (HFETs) [1][2][3][4][5] . This class of compounds is widely used being characterized by the most stable wurtzite structure.…”

Section: Introductionmentioning

confidence: 99%

Electron-electron and electron-phonon correlation effects on the finite-temperature electronic and optical properties of zinc-blende GaN

Kawai

Yamashita²,

Cannuccia³

et al. 2014

Phys. Rev. B

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We combine the effect of the electron-electron and electron-phonon interactions to study the electronic and optical properties of zb-GaN. We show that only by treating the two effects at the same time it is possible to obtain an unprecedented agreement of the zero and finite-temperature electronic gaps and absorption spectra with the experimental results. Compared to the state-ofthe-art results our calculations predict a large effect on the main absorption peak position and width as well as on the overall absorption lineshape. These important modifications are traced back to the combined electron-phonon damping mechanism and non uniform GW level corrections. Our results demonstrate the importance of treating on equal footing the electron and phonon mediated correlation effects to obtain an accurate description of the III-nitrides group physical properties.

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“…Wide bandgap materials, especially group III-nitrides like GaN, are important for optoelectronic and electronic devices such as laser diodes and transistors [1][2][3]. Devices show best performance if fabricated on lattice-matched substrates since lattice-mismatch leads to the generation of misfit dislocations at the interface, which may reduce the performance of devices.…”

Section: Introductionmentioning

confidence: 99%