Nonpolar resistive switching in Mn-doped BiFeO₃ thin films by chemical solution deposition

Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

“…4(c), when applying a positive sweep voltage, the set process occurs at about 4.9 V, and the reset process takes place at about 1.3 V with the same polarity bias, which are lower than the present reports. 22,24 Moreover, the reset current is larger than that of the BRS. After several set-reset processes of URS, the resistance evolution of HRS and LRS is also demonstrated in 60 switching cycles with the same reading voltage of 1V (Fig.…”

“…For URS with the Pt top electrode, conductive filaments formation/rupture controlled by thermal effects mechanism and oxygen vacancies concentration are proposed to explain the URS behavior, which was reported in our previous work. 13,24,38,39 Therefore, for either URS or BRS behavior in the BCFMO thin films, there consists of three portions: the Ohmic region, the Child's law region, and the steep current increase region. These results can be well explained by space charge limited conduction (SCLC) mechanism.…”

“…Since the localized recovery of filament can be determined by the migration of oxygen vacancies, which is dependent on the distribution of electric field, oxygen vacancies concentration and temperature, the created conducting filament would be different in each RS cycle. 24 According to Eq. (1) and (2), the results show that the conduction mechanisms are dominated by the space charge limited leakage current and the Schottky emission.…”

“…23 Luo et al reported the nonpolar resistive switching in Mn-doped BiFeO 3 thin films by chemical solution deposition. 24 However, until now there were few systematic studies on the resistive switching behaviour of metal/Ce and Mn codoped BiFeO 3 /metal sandwiched structure.…”

Study of multiferroic properties of Bi2Fe2WO9 ceramic for device application

“…4 Unfortunately, the performance of BFO for the technological applications is disappointing due to some inherent problems such as (i) easy formation of secondary phase during synthesis, (ii) low resistivity, (iii) low dielectric constant, (iv) high tangent loss and (v) high leakage current. 5,6 In order to get higher coupling coefficient, tireless attempts carried out to solve these inherent tribulations by appropriate modification in its composition or fabricating its composites with another ferroelectrics. Recently, lots of interesting work on synthesis and characterization of BFO have been reported by various workers.…”