Nonsteady photoconductivity of layers of glass of the As-Se system

Mikla, Victor I.; Семак, Д. Г.; Mikhal'ko, I. P.

doi:10.1007/bf00900094

Cited by 3 publications

(2 citation statements)

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“…This can be associated with the fact that the spectra of localized states in films of both types differ significantly. As is known, rf-sputtered films are characterized by bipolar charge transfer, whereas thermally evaporated films undergo unipolar hole transfer [7]. According to the existing concepts, the spectrum of localized states in thermally evaporated films involves deep-level electron traps, which are responsible for the unipolar character of the electronic processes occurring in them.…”

Section: Resultsmentioning

confidence: 99%

Specific features of the relaxation processes in As2Se3 films prepared by different methods

et al. 2006

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The specific features of the processes of charge transfer and accumulation in thin films of arsenic triselenide As 2 Se 3 are investigated by measuring the isothermal relaxation of dark electric currents. It is established that the relaxation properties of the films substantially depend on the method used for their preparation, which, apparently, can be associated with the structural features of this class of materials. Moreover, it is confirmed that the relaxation of the electric current in the films of chalcogenide glasses under investigation occurs through a non-Debye mechanism, irrespective of the preparation technique.

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Section: Resultsmentioning

confidence: 99%

Specific features of the relaxation processes in As2Se3 films prepared by different methods

et al. 2006

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“…The observed differences can be associated with the specific features in the spectrum of localized states inherent in the samples prepared by vacuum thermal evaporation and rf sputtering. According to the existing notions [10], the spectrum of localized states in the films prepared by vacuum thermal evaporation contains deep electron traps, which is responsible for the p-type conductivity of these structures. By contrast, the films prepared by rf sputtering are characterized by the bipolar transfer of charge carriers, which can indicate identical energy distributions of electron and hole traps.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the processes of charge transfer and charge accumulation in As2Se3 amorphous layers prepared by different methods

2009

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The influence of the method used for preparing As 2 Se 3 amorphous layers on the processes of charge transfer and charge accumulation in these structures is studied. Different physical parameters, such as the contact capacitance, the width of the charge accumulation region, and the time of transit of charge carriers through the samples, which characterize the occurring electronic processes, are determined for the layers under investigation.

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