2020
DOI: 10.1088/1361-6528/ab82d7
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Nonvolatile molecular memory with the multilevel states based on MoS2 nanochannel field effect transistor through tuning gate voltage to control molecular configurations

Abstract: A new flexible memory element is crucial for mobile and wearable electronics. A new concept for memory operation and innovative device structure with new materials is certainly required to address the bottleneck of memory applications now and in the future. We report a new nonvolatile molecular memory with a new operating mechanism based on two-dimensional (2D) material nanochannel field-effect transistors (FETs). The smallest channel length for our 2D material nanochannel FETs was approximately 30 nm. The mod… Show more

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Cited by 4 publications
(2 citation statements)
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“…By controlling molecular configurations through the gate voltage, carrier concentration in the 2D material could be modulated, resulting in the multistate memory operation. [76] The device exhibited a decent switching ratio of ~10 3 but showed relatively poor endurance (~50 cycles) performance. Thus, further efforts to improve the retention and endurance of such kind of devices are required to be useful for memory applications.…”
Section: Gate-tunable Memristive Phenomena In Atomically Thin Materialsmentioning
confidence: 99%
“…By controlling molecular configurations through the gate voltage, carrier concentration in the 2D material could be modulated, resulting in the multistate memory operation. [76] The device exhibited a decent switching ratio of ~10 3 but showed relatively poor endurance (~50 cycles) performance. Thus, further efforts to improve the retention and endurance of such kind of devices are required to be useful for memory applications.…”
Section: Gate-tunable Memristive Phenomena In Atomically Thin Materialsmentioning
confidence: 99%
“…Numerous 2D materials have been developed so far, and some have been theoretically predicted [1][2][3][4][5][6][7][8][9][10]. The 2D materials range from conducting graphene, semiconducting transition metal dichalcogenides (TMDCs) to wide bandgap insulating boron nitride (BN) has opened vast new possibilities of integrating the different materials into single devices through van der Waals stacking [11][12][13][14][15][16][17]. Contrary to zero bandgap graphene, 2D TMDCs possess finite energy bandgap which is suitable for optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%