Nonvolatile organic field-effect transistors fabricated on Al foil substrates

Abstract

We fabricated metal-ferroelectric-metal capacitors and bottomgate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly-(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.

Near-threshold SIDO DC-DC converter with a high-precision ZCD for phase change memory chip

“…With the development of CMOS technology, CMOS device size shrinks and memory devices have reached their size limitation, such as DRAM, SRAM and Flash [1,2,3]. Therefore, scientists from academia and industry devote their energies to research new memory material in recent years, such as STT_MRAM [4,5], FeRAM [6,7], RRAM [8,9] and PCRAM [10]. Among the new memory material, phase change random access memory (PCRAM) is regarded as the most probable next-generation nonvolatile memory for its dramatically low latency and exponentially great endurance [11].…”