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A report is presented on a Al/HfN/p-Si(100) n-MISFET with excellent electrical properties that inserts a 4 nm-thick HfN gate dielectric with equivalent oxide thickness of 0.7 nm formed by electron-cyclotronresonance plasma sputtering. The threshold voltage (V th ) of the device was 0.05 V. The on/off ratio and subthreshold swing at W/L = 90 µm/ 5 µm were ∼10 3 and 200 mV/dec., respectively. In particular, the n-MISFET exhibits I DS,sat = 20.2 µA/μm and g m = 20.5 mS/mm. This is the first report of n-MISFET characteristics with HfN gate dielectric.

We fabricated ultra-flexible organic non-volatile ferroelectric field-effect transistors (FeFETs) with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] on polyimide substrates, which adopted a solution-based top-contact/bottom-gate structure for low cost process without patterning. P(VDF-TrFE) gate dielectric layers and regioregular poly(3-hexylthiophene) active layers were formed by the spin-coating method. The field-effect mobility (μFE) was ∼0.28 cm2/V s, the on/off ratio was approximately 5.6 × 103, and the memory window (threshold voltage shift) was approximately 7 V. In addition, FeFETs were operated even at small bend radii without considerable changes in these values.

We fabricated metal-ferroelectric-metal capacitors and bottomgate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly-(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.

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