2012
DOI: 10.1039/c2cc30973d
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Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide

Abstract: Recently, the number of studies concerning organic memory devices has grown rapidly due to increase in the demand for electronic devices. Among the organic memory devices, the development of organic nonvolatile memory materials and devices is becoming an important research topic due to their low power consumption.

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Cited by 66 publications
(32 citation statements)
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“…Charge transfer complex between a metal centre and organic chromophore provides a novel system for memory application because formation of metal filament through redox reaction as well as intermolecular charge transfer. 15,21 To explore the electrical property of the polymers, current density(J)-voltage (V) characteristics of the ITO/PEDOT:PSS/PFFC-1/Al and ITO/PEDOT:PSS/PFFC-2/Al at room temperature are compared in Fig. 3a- 15 Formation of Fc+ in PFFC-1 by electrical oxidation generates holes in the metal-based HOMO and it enhances the conductivity.…”
Section: Corresponding Images Of Homo and Lumo Of Eachmentioning
confidence: 99%
“…Charge transfer complex between a metal centre and organic chromophore provides a novel system for memory application because formation of metal filament through redox reaction as well as intermolecular charge transfer. 15,21 To explore the electrical property of the polymers, current density(J)-voltage (V) characteristics of the ITO/PEDOT:PSS/PFFC-1/Al and ITO/PEDOT:PSS/PFFC-2/Al at room temperature are compared in Fig. 3a- 15 Formation of Fc+ in PFFC-1 by electrical oxidation generates holes in the metal-based HOMO and it enhances the conductivity.…”
Section: Corresponding Images Of Homo and Lumo Of Eachmentioning
confidence: 99%
“…Zhang et al prepared the active layer in the memory device based on polymer covalently functionalized RGO sheet. [21,[30][31][32] Recently, Sun et al fabricated nonvolatile memory devices based on hybrid composites of poly(vinyl alcohol) (PVA) and GO [102] (Figure 3g). [29] The electrical switching properties of the memory device showed nonvolatile rewritable memory effects (Figure 3d).…”
Section: Go and Rgo Composite-based Rerammentioning
confidence: 99%
“…[20][21][22] For further improvement of the memory properties such as rewritable memory behavior or high ON/ OFF ratio, many studies attempted to embed diverse materials such as Au, Ag nanoparticles, [13,23] transition metal chalcogenide (TMD) including MoS 2 , [24,25] and carbon material (e.g., carbon nanotube, graphene, graphene oxide (GO), reduced graphene oxide (RGO), etc.) [20,21,[26][27][28][29][30][31][32][33][34][35] Moreover, polymers such as polyvinylpyrrolidone (PVP) can exfoliate MoS 2 , which then becomes a dielectric layer that can induce resistive switching effect; polymer functions as an insulator, and MoS 2 act as a dopant. [20,21,[26][27][28][29][30][31][32][33][34][35] Moreover, polymers such as polyvinylpyrrolidone (PVP) can exfoliate MoS 2 , which then becomes a dielectric layer that can induce resistive switching effect; polymer functions as an insulator, and MoS 2 act as a dopant.…”
mentioning
confidence: 99%
“…4,5 Moreover, redox-active organic monolayers can be used as potential materials for dynamic random access memory (DRAM) memories due to the nature of the charge storage/release mechanism inherent to the redox reactions. [6][7][8][9] A critical challenge of the metallocene-based redox systems is the stabilization of the redox-active centers on the electrode. Most of these previous studies have focused on stabilizing the redox-active centers (such as ferrocene or porphrins) on hydrogen-terminated silicon using complex sidechains, [10][11][12][13][14][15] or ferrocene-containing "pendant" sidechain-based polymers.…”
Section: Introductionmentioning
confidence: 99%