“…[20][21][22] For further improvement of the memory properties such as rewritable memory behavior or high ON/ OFF ratio, many studies attempted to embed diverse materials such as Au, Ag nanoparticles, [13,23] transition metal chalcogenide (TMD) including MoS 2 , [24,25] and carbon material (e.g., carbon nanotube, graphene, graphene oxide (GO), reduced graphene oxide (RGO), etc.) [20,21,[26][27][28][29][30][31][32][33][34][35] Moreover, polymers such as polyvinylpyrrolidone (PVP) can exfoliate MoS 2 , which then becomes a dielectric layer that can induce resistive switching effect; polymer functions as an insulator, and MoS 2 act as a dopant. [20,21,[26][27][28][29][30][31][32][33][34][35] Moreover, polymers such as polyvinylpyrrolidone (PVP) can exfoliate MoS 2 , which then becomes a dielectric layer that can induce resistive switching effect; polymer functions as an insulator, and MoS 2 act as a dopant.…”