Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta<sub>2</sub>O<sub>5−x</sub>/Pt, Pt structure

Wang, Qi; Itoh, Yaomi; Hasegawa, Tsuyoshi; Tsuruoka, Tohru; Yamaguchi, Shu; Watanabe, Satoshi; Hiramoto, Toshiro; Aono, Masakazu

doi:10.1063/1.4811122

Cited by 12 publications

(5 citation statements)

References 29 publications

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“…As a negative bias is applied on the top electrode TaN (positive bias applied on bottom electrode Ni), it will build an electric field that drives oxygen vacancies to move toward the top electrode TaN and therefore the filament will be ruptured, making devices switch to HRS. In fact, the voltage-driven oxygen vacancies movement has been proposed in the literature as the switching mechanism for other dielectrics [22,23]. On the other hand, applying a positive bias on the top electrode TaN (negative bias applied on bottom electrode) under HRS would repel the oxygen vacancies near the top electrode toward the bottom electrode and re-align the oxygen vacancies to form conducting filaments because of the downward electric field, switching devices from HRS to LRS.…”

Section: Resultsmentioning

confidence: 99%

Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode

Lin

Chang

et al. 2014

Nanoscale Res Lett

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A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO x /Ni/n+-Si was proposed to suppress sneak current where TaN/ZrTiO x /Ni can be regarded as a resistive-switching random access memory (RRAM) device while Ni/n+-Si acts as an Schottky diode. This is the first RRAM cell structure that employs metal/semiconductor Schottky diode for current rectifying. The 1D1R cell exhibits bipolar switching behavior with SET/RESET voltage close to 1 V without requiring a forming process. More importantly, the cell shows tight resistance distribution for different states, significantly rectifying characteristics with forward/reverse current ratio higher than 103 and a resistance ratio larger than 103 between two states. Furthermore, the cell also displays desirable reliability performance in terms of long data retention time of up to 104 s and robust endurance of 105 cycles. Based on the promising characteristics, the four-layer 1D1R structure holds the great potential for next-generation nonvolatile memory technology.

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Section: Resultsmentioning

confidence: 99%

Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode

Lin

Chang

et al. 2014

Nanoscale Res Lett

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“…In Fig. (c), we assumed that filament formation of oxygen vacancies starts from the anode side based on the result that conductive channel is formed at the anode side in TaO x ‐based three‐terminal ReRAM . Filament formation from the anode side is also reported in Cu–TaO x system, in which Cu‐drift is the limiting process .…”

Section: Resultsmentioning

confidence: 97%

Dynamic moderation of an electric field using a SiO₂ switching layer in TaO_x ‐based ReRAM

Wang

Itoh

Tsuruoka

et al. 2015

Physica Rapid Research Ltrs

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ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra‐thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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“…Similar multi-terminal memristor schemes have also been explored in oxide nanowires to understand resistive switching mechanisms, [69] and in planar films of Ag nanoclusters to demonstrate heterosynaptic plasticity. [70] Three-terminal memistors have also been studied in Ta 2 O 5 , [71][72][73] TiO 2 , [68] SrTiO 3 , [74] and Ag/Cu atomic switches, [75] often with the addition of a gate dielectric to reduce the leakage currents from the third terminal (Figure 3a). However, while memistors can show continuous conductance states with a wide dynamic range, [76] the additional terminal increases the device footprint and fabrication complexity, limiting their suitability as synaptic elements.…”

Section: Memtransistor Fundamentalsmentioning

confidence: 99%

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

et al. 2022

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Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy‐efficient information processing of the brain. While non‐volatile memory (NVM) based on resistive switches, phase‐change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi‐terminal device concepts are required for more sophisticated bio‐realistic functions. Of particular interest are memtransistors based on low‐dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi‐terminal NVM devices including dual‐gated floating‐gate memories, dual‐gated ferroelectric transistors, and dual‐gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase‐changes properties of nanomaterials. Finally, strategies for achieving wafer‐scale integration of memtransistors and multi‐terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

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Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta₂O_5−x/Pt, Pt structure

Cited by 12 publications

References 29 publications

Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode

Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode

Dynamic moderation of an electric field using a SiO₂ switching layer in TaO_x ‐based ReRAM

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

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Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5−x/Pt, Pt structure

Cited by 12 publications

References 29 publications

Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode

Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode

Dynamic moderation of an electric field using a SiO2 switching layer in TaOx ‐based ReRAM

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

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Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta₂O_5−x/Pt, Pt structure

Dynamic moderation of an electric field using a SiO₂ switching layer in TaO_x ‐based ReRAM