Dynamic moderation of an electric field using a SiO₂ switching layer in TaO_x ‐based ReRAM

Abstract

ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra‐thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

“…62 A combination of a solid electrolyte with high levels of Cu inclusions and an oxide with reduced solubility is thought to be most effective. Similar double layer structures were also used for VCM-type ReRAMs, [72][73][74] where the oxygen vacancies form the CF. Kudo et al investigated a miniaturized Cu-Te/insulator device using in situ TEM, and claimed the formation of Cu filament on a nanometre scale.…”

Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection

“…Recently, resistive switching random access memory (RRAM) has been specified as one of the most progressive next generation nonvolatile memories to replace 3D flash due to its simple metal-insulator-metal structure, complementary metal-oxide-semiconductor (CMOS) compatibility, low power consumption, better uniformity, strong data retention, long endurance, and easier fabrication with low cost 1 – 4 . The RRAM devices with several high-κ materials such as Ta 2 O 5 5 , 6 , HfO x 7 , 8 , TiO 2 9 , BaTiO 3 10 have been reported by several groups. Along with these different oxides, the GeO x material has profound potential to execute resistive switching owing to its compatibility with back-end-of-line (BOEL) process in CMOS technology, capability of producing oxygen vacancy at low temperature 11 , widely spanned dielectric constant values (k~12–15) 12 , large band gap (E g ~4.3–5.9 eV) 13 , 14 , and good thermal stability 15 , 16 .…”

Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device

“…Unlike conventional resistive switching in other resistive switching devices 31 , the device in this work did not need a forming process and the resistive switching is recoverable. The switching time from the ON state to the OFF state can be controlled by the compliance current.…”

“…In this work, Pt/Ta 2 O 5−x /W structured devices were investigated in a vertical architecture that is much desired in high density integration 24 – 30 , which makes the hardware implementation of neuromorphic networks with a comparable number of devices as human’s synapse number possible, and resistive switching properties in Pt/Ta 2 O 5 junctions in a forward potential applying to Pt was discovered. Unlike conventional resistive switching in other resistive switching devices 31 , the device in this work did not need a forming process and the resistive switching is recoverable. The switching time from the ON state to the OFF state can be controlled by the compliance current.…”