Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection

Abstract

Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeOx film in a simple W/GeOx/W structure and understanding of switching mechanism through redox reaction in H2O2/sarcosine sensing (or changing Ge°/Ge4+ oxidation states under external bias) have been reported for the first time. Oxidation states of Ge0/Ge4+ are confirmed by both XPS and H2O2 sensing of GeOx membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >106 cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 µA. The thickness of GeOx layer is found to be increased to 12.5 nm with the reduction of polycrystalline grain size of <7 nm after P/E of 106 cycles, which is observed by high-resolution TEM. The switching mechanism is explored through redox reaction in GeOx membrane by sensing 1 nM H2O2, which is owing to the change of oxidation states from Ge0 to Ge4+ because of the enhanced O2− ions migration in memory device under external bias. In addition, sarcosine as a prostate cancer biomarker with low concentration of 50 pM to 10 µM is also detected.

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory Devices

“…and Samanta et al . , On a similar note, temperature-dependent conduction mechanisms were used by Bai et al to explain the V o 2+ evolution at different multilevel states . A V o 2+ evolution model was also proposed by Qi et al .…”

“…25 Numerical models were also proposed by Larentis et al and Kim et al to explore temperature and fieldaccelerated migration of V o 2+ . 26,27 Arrhenius equation models were also investigated by Chiu et al and Khurana et al 28,29 Furthermore, a negative voltage-modulated multilevel resistive switching during reset was observed and explained using conduction mechanisms by Chakrabarti et al and Samanta et al 30,31 33 Although these works of literature exhibit various methods of explaining filament evolution in multilevel states, there have been limited physics understanding on the behavior and density of oxygen vacancies (n D ) at different stopping reset voltages (V stop ). Such a study is important because a combination of experimental and theoretical aspects will provide a more comprehensive understanding of filament evolution in multilevel state RRAM.…”

High stability resistive switching mechanism of a screen-printed electrode based on BOBZBT2 organic pentamer for creatinine detection

“…For instance, it was reported that the presence of hydrogen and humidity may enhance the metal ion transport thus, impacting the RS response 8 , 9 . This can be utilized for sensing application as demonstrated in 10 , where, the biomarker for prostate cancer, H 2 O 2 /Sarcosine, was detected through the use of GeO x membrane incorporated in Electrode-Insulator-Semiconductor (EIS) structure. In 11 , with minimal device fabrication procedures, an RS-based ethanol sensor was developed by utilizing a ± 20 V Cyclic Voltammetry (CV) voltage sweep.…”

Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning

“…Numerous studies are going on to implement the function of biological synapses into solid-state devices using emerging memories, where data are kept in the form of conductance [2]- [5]. Memristors [4], [6]- [8], [9], [10] are considered to be leading candidates, because memristorbased synapse [11]- [14] resembling biological synapse through complex ion-controlled mechanisms depends on neural signal strengths.…”