Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO&lt;inf&gt;2&lt;/inf&gt; tunnel dielectrics

Lee, Bongmook; Kirkpatrick, Casey; Yang, Xiangyu; Jayanti, Srikant; Suri, Rahul; Roberts, John C.; Misra, Veena

doi:10.1109/iedm.2010.5703401

Cited by 16 publications

(13 citation statements)

References 5 publications

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“…So far, there are several approaches to realize an enhancement mode operation, such as a recessed gate structure [1] [2], p-GaN gate [3][4] [5], p-AlGaN gate [6], fluoride-based plasma treatment [7], the piezoneutralization layer [8], and floating charges [9], etc. Among these different approaches, the AlGaN/GaN HEMT with either a p-GaN or p-AlGaN gate is a promising candidate for an enhancement mode device.…”

Section: Introductionmentioning

confidence: 99%

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Marcon

You

et al. 2015

IEEE Electron Device Lett.

182

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In this work, we studied the forward bias gate breakdown mechanism on Enhancement-mode p-GaN gate AlGaN/GaN HEMTs. To the best of our knowledge, it is the first time that the temperature dependency of the forward gate breakdown has been characterized. We report for the first time on the observation of a positive temperature dependency, i. e., a higher temperature leads to a higher gate breakdown voltage. Such unexpected behavior is explained by avalanche breakdown mechanism: at a high positive gate bias, electron/hole pairs are generated in the depletion region at the Schottky metal/p-GaN junction. Furthermore, at a high gate bias but before the catastrophic gate breakdown, a light emission was detected by a emission microscopy measurement (EMMI). This effect indicates an avalanche luminescence, which is mainly due to the recombination of the generated electron/hole pairs. Index Terms-p-GaN, AlGaN/GaN HEMTs, Forward bias gate breakdown, avalanche breakdown.

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Section: Introductionmentioning

confidence: 99%

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Marcon

You

et al. 2015

IEEE Electron Device Lett.

182

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“…The values of d 1 , d 2 , and d 3 in this Sentaurus TCAD simulation exercise are set at 4 nm and d 4 is set at 3 nm. The top gate dielectric layer is free from any plasma treatment and serving as a barrier to prevent any electron tunneling in order to reduce the gate leakage current [32].…”

Section: Tcad Simulations On the Proposed Gate Structurementioning

confidence: 99%

Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices

Huang

Liang

2015

Solid-State Electronics

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“…11 shows the retention characteristic comparisons between experimental floating gate structure and simulated combined recessed gate and floating gate structures. The experimental data are from references [11] and [12]. The different charge densities at different retention time are set in the simulations, respectively, according to the relationship of the charge density changing with the elapsed time from the experimental data.…”

Section: B Combined Recessed Gate and Fixed Insulator Interfacementioning

confidence: 99%

Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures

Huang

Liang

Samudra

et al. 2013

2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS)

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Normally-off operation is strongly desired for safety and efficient power switching in order to make the HEMT devices compatible with the currently used Si based IGBT and MOSFET devices. Combination of partially gate recess etching and gate insulator interface or floating gate charges in MIS structures is proposed and demonstrated for the first time to realize the normally-off mode. Partially gate trench can effectively reduce 2DEG density and shift threshold voltage (V th ) to positive without severely degrading in 2DEG channel conductance, while gate insulator interface or floating gate charges can further increase V th at a relatively low charge density and thus maintain normally-off mode at a much longer time. Sentaurus TCAD is used to systematically simulate and predict the characteristics of the proposed structures. A positive V th of larger than 3 V is demonstrated by employment of gate recess with 5~10 nm barrier leftover in combination of gate dielectric charging with a low sheet density of ~10 12 cm -2 . The proposed structures are very promising in future power switching applications due to the large positive V th and the low gate leakage current density by adjusting the gate insulator thickness.Index Terms-AlGaN/GaN HEMT, normally-off operation, threshold voltage (V th ), gate recess, gate charging, floating gate.

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Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO<inf>2</inf> tunnel dielectrics

Cited by 16 publications

References 5 publications

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices

Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures

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