Novel combination of orientation measurements and transmission microscopy for experimental determination of grain boundary miller indices in silicon and other semiconductors

Abstract

Summary The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al., 1992; Elgat et al., 1985) or to metallograpical investigations of the grain boundary (Randle et al., 1993). The first method is expensive, and both are complex and time consuming in grain boundary preparation. This paper proposes the determination of grain boundary planes in semiconductor wafer by a combined application of Electron Back Scatter Diffraction and Infrared Transmission Microscopy. In particular, the new method is demonstrated with directional solidificated multicrystalline silicon.

Photocatalytic water oxidation over LaWO0.6N2.4 mesoporous single crystals under visible and near-infrared light illumination

“…These GBs not only are enriched with defects but also serve as interceptions to the photocarrier transportation across neighboring particles. [24][25][26][27][28][29] Accordingly, it implicates a useful strategy to upgrade the photocatalytic performance of LaWO 0.6 N 2.4 by eliminating the GBs as well as defects.…”