Novel device lifetime behavior and hot-carrier degradation mechanisms under V/sub GS/≅V/sub TH/ stress for thin-film SOI nMOSFETs

Wang-Ratkovic, J.; Huang, W.M.; Hwang, Bor-Yuan; Racanelli, M.; Forestner, J.; Woo, J.C.S.

doi:10.1109/iedm.1995.499301

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Cited by 4 publications

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“…A 10 year NMOS device lifetime at V, , of -3V (Fig. 13) [31] and ESD of >2KV HBM protection [32,33] are also demonstrated.…”

Section: Manufacturabilitymentioning

confidence: 96%

TFSOI technology for portable wireless communication systems

Huang

Tseng²,

Monk³

et al.

Proceedings of CICC 97 - Custom Integrated Circuits Conference

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Recent growth in the portable wireless communication market has driven semiconductor technologies toward voltage and power reduction. The reduced junction capacitance and near-ideal MOS device characteristics of SO1 provides an inherent advantage for low-voltage low-power applications. Substantial progress in applying SO1 technology for these applications has been demonstrated in recent years. The quest for a single chip system has also initiated work in developing high frequency and analog SO1 circuits. In this paper, the application of Thin-Film-Silicon-On-Insulator (TFSOI) technology for wireless communication systems will be reviewed and future development will be discussed.

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“…A 10 year NMOS device lifetime at V, , of -3V (Fig. 13) [31] and ESD of >2KV HBM protection [32,33] are also demonstrated.…”

Section: Manufacturabilitymentioning

confidence: 96%