Novel DNQ PACs for high-resolution i-line lithography

Brunsvold, William R.; Eib, Nicholas K.; Lyons, Christopher F.; Miura, Steve S.; Plat, Marina V.; Dammel, Ralph R.; Evans, Otis; Rahman, M. Dalil; Khanna, Dinesh N.; Jain, Sangya; Lu, Peng-Han; Ficner, Stanley A.

doi:10.1117/12.59778

Cited by 5 publications

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“…The traditional positive tone photoresists composed of diazonaphthoquinones (DNQs) and novolac-based resins are still most widely used for their good thermal stability, high contrast, and excellent resistance in the i-line resists market. , The wide molecular weight distributions and the undefined structure of novolac resins make it hard to process higher-resolution patterns below 0.35 μm. Moreover, there exist problems including line edge roughness (LER) and image uniformity that combine to hinder optimal resist performance ,.…”

Section: Introductionmentioning

confidence: 99%

Formation of Nanotunnels Inside a Resist Film in Laser Interference Lithography

Wei

Wang

2015

Langmuir

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A few kinds of 2-diazo-1-naphthoquinone-4-sulfonates of poly(4-hydroxylstyrene) were prepared to form one-component i-line photoresists. In the laser interference lithography experiments of some of the photoresists, nanotunnels were observed to be aligned in the interior of the resist film. The shape and size of the nanotunnels remain virtually unchanged even under an increased exposure dose, indicating that the exposure energy is confined within the tunnel space. The formation of the nanotunnels results from the effect of standing waves and the permeation of developer from the surface deep into the resist films.

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Section: Introductionmentioning

confidence: 99%

Formation of Nanotunnels Inside a Resist Film in Laser Interference Lithography

Wei

Wang

2015

Langmuir

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Cbr(contrast boosted resists) using halomethylaryl ketone as a base-labile water-repellent compound.

Uchino

Ueno

Migitaka

et al. 1995

J. Photopol. Sci. Technol.

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In recent years, contrast enhanced resists using base-labile compounds, such as phenolphthalein [1,2,3] or acetoxybenzene [4] derivatives have been reported. All of these contrast enhanced resists have been positive resists. We previously reported a new contrast enhancement method [5] which can be applied to both negative and positive resists. The resists made using this method are called contrast boosted resists (CBRs) and they consist of a phenolic resin, a photoactive compound, and a base-labile water-repellent compound. The patterning process of a negative CBR is shown in Fig. 1. The CBR offers high resolution because the photochemically induced solubility difference between the exposed and unexposed regions is enhanced by the base-labile water-repellent compound. In the exposed region, the photochemically produced hydrophobic compounds and the added water-repellent compound work together to retard permeability of the base developer penetrating into the resist. Thus, the exposed region of the CBR is completely insolubilized in the base developer. On the other hand, the base developer permeates into the unexposed region of the CBR and converts the waterrepellent compound into hydrophilic compounds that do not inhibit dissolution in phenolic resin.Therefore, CBRs exhibit a large dissolution rate contrast compared to conventional resists.To find base-labile water-repellent compounds suitable for CBRs, the halomethylaryl ketones listed in Table 1 were evaluated as the base-labile water-repellent compounds. A halomethylaryl ketone was doped into a conventional negative resist composed of 4,4'-diazido-3,3'-dimethoxybiphenyl (DMDA) and m,p-cresol novolak resin (DMDA/novolak=1O/100; in weight ratio). The sensitivity curves of the resists consisting of DMDA, a halomethylaryl ketone, and an m,p-cresol novolak resin (DMDA/halomethylaryl ketone/ novolak=10/20/100: in weight ratio) are shown in Fig. 2. The resist doped with TBAB gave the highest resist contrast, and followed by BBAB and BAB.The contrast enhancement of the resist using TBAB can be explained as follows. When the resist is exposed to UV light (i-line: 365 nm), DMDA crosslinks the novolak resin. The crosslinked novolak resin and TBAB work together to retard the permeability of the base developer penetrating the resist in the exposed region. Then, the exposed region is completely

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Novolac‐based resists

Hanabata

1994

Adv Material for Optics Elec

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The performance of novolac-diazonaphthoquinone-based positive-working resists is discussed in terms of the molecular weight distributions and microstructures of the novolac resins and the structural variations in the photoactive dissolution inhibitor. Modelling studies leading to recent improvements allowing the delineation of 0.35 pm line and space patterns by ensuring a focal depth of 1.5 pm are outlined. Consideration is also given to the new problems such as pivotal shift and halation that arise in the application of high-resolution photolithography using novolac-diazonaphthoquinone resists.

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Novel DNQ PACs for high-resolution i-line lithography

Cited by 5 publications

References 0 publications

Formation of Nanotunnels Inside a Resist Film in Laser Interference Lithography

Formation of Nanotunnels Inside a Resist Film in Laser Interference Lithography

Cbr(contrast boosted resists) using halomethylaryl ketone as a base-labile water-repellent compound.

Novolac‐based resists

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