Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction

Chen, Chih-Han; Chang, Shoou Jinn; Li, Meng-Ju; Chen, I-Cherng; Hsueh, Ting-Jen; Hsu, Cheng-Liang

doi:10.1016/j.cplett.2009.06.007

Cited by 85 publications

(21 citation statements)

References 19 publications

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“…Chen and co-workers describe the vapor-liquid-solid deposition technique, using this technique they deposit a ZnO thin film on p-GaN/ sapphire substrate, to fabricate p-n heterojunction photodetector [19]. Lin et al fabricate ZnO UV photodetector by using molecular beam epitaxy.…”

Section: Introductionmentioning

confidence: 98%

Chemical bath deposited ZnO thin film based UV photoconductive detector

Shaikh

Inamdar

Ganbavle

et al. 2016

Journal of Alloys and Compounds

131

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Section: Introductionmentioning

confidence: 98%

Chemical bath deposited ZnO thin film based UV photoconductive detector

Shaikh

Inamdar

Ganbavle

et al. 2016

Journal of Alloys and Compounds

131

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“…Recently, wide bandgap semiconductors such as ZnO, GaN, and TiO 2 have been commonly investigated owing to their promising advantages such as high sensitivity at room temperature [4,5,6,7,8,9]. However, indium–gallium–oxide (IGO) is not commonly reported in the literature.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors

Chang

2016

Sensors

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A metal–semiconductor–metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed. Under low oxygen partial pressure, the devices work in the photoconductive mode because of the large number of subgap states. Therefore, the devices exhibit internal gain. These defects in the films result in slow switching times and lower photo/dark current ratios. A higher flow ratio of oxygen during the sputtering process can effectively restrain the oxygen vacancies in the film. The responsivity of the photodetector fabricated under an oxygen flow ratio of 20% can reach 0.31 A/W. The rise time and decay time can reach 21 s and 27 s, respectively.

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“…For practical use, UV detectors should exhibit excellent operational characteristics, including rapid response, high sensitivity, and good wavelength selectivity. Among them, nanodevices that can vary their electrical signals under illumination have attracted much attention because of their high sensitivity and ease of signal reading 9 10 11 . Such detectors can be categorized as either Schottky or ohmic nanodevices.…”

mentioning

confidence: 99%

Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light

You

et al. 2015

Sci Rep

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In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We measured the I–V characteristics of ZnO nanowire devices to confirm that ZnO is an n-type semiconductor and that the on/off ratio is approximately 104. From temperature-dependent I–V measurements we obtained a SBH of 0.661 eV for a ZnO NW Schottky device in the dark. The photosensitivity of Schottky devices under UV illumination at a power density of 3 μW/cm2 was 9186%. Variations in the SBH account for the superior characteristics of n-type Schottky devices under illumination with UV light. The SBH variations were due to the coupled mechanism of adsorption and desorption of O2 and the increase in the carrier density. Furthermore, through temperature-dependent I–V measurements, we determined the SBHs in the dark and under illumination with UV light at power densities of 0.5, 1, 2, and 3 μW/cm2 to be 0.661, 0.216, 0.178, 0.125, and 0.068 eV, respectively. These findings should be applicable in the design of highly sensitive nanoscale optoelectronic devices.

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Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction

Cited by 85 publications

References 19 publications

Chemical bath deposited ZnO thin film based UV photoconductive detector

Chemical bath deposited ZnO thin film based UV photoconductive detector

The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors

Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light

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