Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material

Cheng, Huai-Yu; Chien, Wei-Ming; BrightSky, M.; Ho, Yung-Han; Zhu, Yu; Ray, A.; Bruce, Robert L.; Kim, W.; Yeh, Chau‐Shioung; Lung, Hsiang-Lan; Lam, C.

doi:10.1109/iedm.2015.7409620

Cited by 28 publications

(11 citation statements)

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“…Failure rate of GaSbGe-based PCM in a 128 Mb test chip. Only 1% of devices fails after one hour bake at 300 • C (reproduced with permission from [52]). is detrimental for device programming time (> 1µs).…”

Section: B Performance and Reliabilitymentioning

confidence: 99%

“…is detrimental for device programming time (> 1µs). Even if it is the main trend, recent works [52] demonstrated that PCM integrating innovative ternary materials based on GaSbGe alloys can provide high temperature data retention (10 years of retention at 220 • C) still featuring SET time below 100 ns. As reported in Fig.…”

Section: B Performance and Reliabilitymentioning

confidence: 99%

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Phase Change and Magnetic Memories for Solid-State Drive Applications

et al. 2017

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The state-of-the-art solid-state drives (SSDs) now heterogeneously integrate nand Flash and dynamic random access memories (DRAMs) to partially hide the limitation of the nonvolatile memory technology. However, due to the increased request for storage density coupled with performance that positions the storage tier closer to the latency of the processing elements, nand Flash are becoming a serious bottleneck. DRAM as well are a limitation in the SSD reliability due to their vulnerability to the power loss events. Several emerging memory technologies are candidate to replace them, namely the storage class memories. Phase change memories and magnetic memories fall into this category. In this work, we review both technologies from the perspective of their possible application in future disk drives, opening up new computation paradigms as well as improving the storage characteristics in terms of latency and reliability

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Section: B Performance and Reliabilitymentioning

confidence: 99%

Section: B Performance and Reliabilitymentioning

confidence: 99%

Phase Change and Magnetic Memories for Solid-State Drive Applications

et al. 2017

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“…19 For Ge-doped GaSb PCM, it has been shown that the devices can still be SET within 100 ns even if T x is high. 33 That is one of the unique characteristics for GaSb based material since it can have high thermal stability without sacrificing speed. The phase segregation observed in this paper could, however, be a key issue for device performance as it can affect crystallization.…”

Section: Ge Doping Level T X ( C)mentioning

confidence: 99%

“…Even so, the cycling endurance in the Ge-doped GaSb devices is guaranteed to up to 1 Â 10 8 . 33 It should actually be pointed out that the experimental conditions (slow ramp rate and long annealing time) for the combined experiment could favor Ge crystallization and phase separation as they correspond to high thermal budget and do not relate to thermal budget involved during the device SET process.…”

Section: Ge Doping Level T X ( C)mentioning

confidence: 99%

Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories

Putero

Coulet

Müller

et al. 2016

Applied Physics Letters

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International audienceIn order to optimize materials for phase change random access memories (PCRAM), the effect of Ge doping on Ga-Sb alloy crystallization was studied using combined in situ synchrotron x-ray techniques, electrical measurements, and static laser testing. The present data emphasize that the crystallization temperature can be increased up to 390 degrees C with subsequent higher thermal stability of the amorphous phase; phase segregation is evidenced with GaSb, Sb, and Ge phases that crystallize in a two-step crystallization process. The Ge-doped GaSb films exhibit a larger electrical contrast as compared to undoped GaSb alloy (up to x 100). The optical contrast measured by laser testing is shown to follow the mass density change variations upon crystallization, with a negative contrast (higher value in amorphous state) whatever Ge-doping levels. In situ x-ray reflectivity measurements show that zero mass density change can be achieved by low Ge-doping. Ge-doped GaSb alloys look promising since a phase change material with zero mass density change and higher crystallization temperature satisfactorily fulfills the specifications for reliable PCRAM cells in terms of endurance and data retention. (C) 2016 AIP Publishing LLC

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“…Phase-Changing RAMs (PCRAMs) [67][68][69][70][71][72], in which a chalcogenide glass can change phase from amorphous to crystalline. Moreover, chalcogenide glass can also hold an intermediate state, allowing for multilevel storage.…”

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confidence: 99%

Edge Computing: A Survey On the Hardware Requirements in the Internet of Things World

et al. 2019

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In today’s world, ruled by a great amount of data and mobile devices, cloud-based systems are spreading all over. Such phenomenon increases the number of connected devices, broadcast bandwidth, and information exchange. These fine-grained interconnected systems, which enable the Internet connectivity for an extremely large number of facilities (far beyond the current number of devices) go by the name of Internet of Things (IoT). In this scenario, mobile devices have an operating time which is proportional to the battery capacity, the number of operations performed per cycle and the amount of exchanged data. Since the transmission of data to a central cloud represents a very energy-hungry operation, new computational paradigms have been implemented. The computation is not completely performed in the cloud, distributing the power load among the nodes of the system, and data are compressed to reduce the transmitted power requirements. In the edge-computing paradigm, part of the computational power is moved toward data collection sources, and, only after a first elaboration, collected data are sent to the central cloud server. Indeed, the “edge” term refers to the extremities of systems represented by IoT devices. This survey paper presents the hardware architectures of typical IoT devices and sums up many of the low power techniques which make them appealing for a large scale of applications. An overview of the newest research topics is discussed, besides a final example of a complete functioning system, embedding all the introduced features.

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Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material

Cited by 28 publications

References 1 publication

Phase Change and Magnetic Memories for Solid-State Drive Applications

Phase Change and Magnetic Memories for Solid-State Drive Applications

Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories

Edge Computing: A Survey On the Hardware Requirements in the Internet of Things World

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