Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications

Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates

“…Compared with un-doped PZT, Lanthanum doping can effectively reduce oxygen vacancy, decrease leakage current, and lower the fatigue and domain pinning. [19][20][21] Especially, PLZT is in the ferroelectric tetragonal region with remarkable piezoelectric effect, high dielectric permittivity around 1300, high breakdown electric field around 2.0 MV cm −1 , as well as the slim hysteresis loop beneficial for low-loss dynamic energy storage applications. 22,23 It also has a suitable Curie temperature of about 180 °C, 24 preventing phase change from ferroelectric to dielectric under the thermal budget of 150 °C typically applied for fabrication of GFET/PLZT-gate devices.…”

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb0.92La0.08Zr0.52Ti0.48O3 Film Thickness

“…It is a well-known member of the perovskite family and shows great potential in applications such as nonvolatile random access memories, microwave devices, and electromechanical or photo-mechanical transducers. [13][14][15] In particular, research has been focused on its energy storage ability owning to its high permittivity and low remnant polarization. 3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 4 silicon substrates.…”

Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

“…[3][4][5] In particular, Pb(Zr 0.52 Ti 0.48 )O 3 with a low coercive field and high remnant polarization 6 has been widely investigated for application in microwave devices, 7 energy storage, and capacitance. 8 However, the common Pb loss induced a large number of oxygen vacancies, which locate typically at grain boundaries or/and at the interfaces between PZT and electrodes. Recently, lanthanum doped PZT with different Zr/Ti ratio, such as 65/35, 53/47, or 20/80, has been investigated, since it can effectively reduce oxygen vacancy, decrease leakage current, and lower the fatigue and domain pinning.…”

“…Recently, lanthanum doped PZT with different Zr/Ti ratio, such as 65/35, 53/47, or 20/80, has been investigated, since it can effectively reduce oxygen vacancy, decrease leakage current, and lower the fatigue and domain pinning. [8][9][10] In general, higher La content makes the peaks of the dielectric permittivity broader and the temperature of the permittivity maxima T m lower. For example, the T m of La-doped PZT with a Zr/Ti ratio of 65/35 decreased from 350 C to 105 C with increasing La content from 0 to 8 at.…”