Novel Full Wafer Inspection Technology for Non-Visual Residue Defects

Bryant, R.; Hickson, Joel D.; Hawthorne, Jeff

doi:10.4028/www.scientific.net/ssp.134.289

Cited by 5 publications

(3 citation statements)

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“…The non-contact Surface Potential Difference Imaging technique introduced in 2005 (also named Chemetriq) is very useful for analysing traces of metals, particle residues left after wet-cleaning and organics (7)(8). Fast to use on Cz Silicon (n and p-type), it has also been tested on standard SOI wafers (9).…”

Section: In-line Monitoring Techniquesmentioning

confidence: 99%

“…Metallic contamination measurements have been much improved recently with the introduction of automated Inductively Coupled Plasma Mass Spectrometry and Total X-Ray Fluorescence tools etc. The non-contact Surface Potential Difference Imaging technique introduced in 2005 (also named Chemetriq) is very useful for analysing traces of metals, particle residues left after wet-cleaning and organics (7)(8). Fast to use on Cz Silicon (n and p-type), it has also been tested on standard SOI wafers (9).…”

Section: In-line Monitoring Techniquesmentioning

confidence: 99%

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SOI and Other Semiconductor-On-Insulator Substrates Characterization

et al. 2009

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We focus in this paper on SOI and new engineered on-insulator substrates characterization. After a short review of on-line characterization techniques, we will detail off-line monitoring techniques such as preferential etching and Raman spectroscopy. We will especially highlight their complementarities on strained layers and the need for a proper evaluation of structural quality of on-insulator substrates.

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Section: In-line Monitoring Techniquesmentioning

confidence: 99%

Section: In-line Monitoring Techniquesmentioning

confidence: 99%

SOI and Other Semiconductor-On-Insulator Substrates Characterization

et al. 2009

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“…Up to date TXRF tools offer quantitative analyses on entire wafer [6] for global and local concentration [7][8]. Furthermore, a novel full wafer inspection technology for non-visual residues has been recently proposed: the ChemitriQ ® method [9]. It detects traces of metals and organics, wet clean residues and surface preparation anomalies.…”

Section: Advances In Contamination Managementmentioning

confidence: 99%

Cleanliness Management in Advanced Microelectronic

Borde

Danel²,

Roche

et al. 2009

SSP

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After technical results presented the last two years and new results on volatile contamination, this paper reviews the contamination management in advanced microelectronic and proposes rules for advanced Integrated Circuits (IC) manufacturing. The competitiveness of a production line is insured only if right contamination management rules are applied. These rules must allow a fast introduction of disruptive technologies while keeping as low as possible associated costs: processing on shared equipments, determination of acceptable levels of contamination with a good understanding of their detrimental impact on devices, knowledge on contamination dissemination mechanisms. Moreover, a control of contamination using appropriate cleanings and metrologies is mandatory.

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Novel Analytical Methods for Cleaning Evaluation

Sparks¹,

Diebold²

2010

Handbook of Cleaning in Semiconductor Manufacturing

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Novel Full Wafer Inspection Technology for Non-Visual Residue Defects

Cited by 5 publications

References 0 publications

SOI and Other Semiconductor-On-Insulator Substrates Characterization

SOI and Other Semiconductor-On-Insulator Substrates Characterization

Cleanliness Management in Advanced Microelectronic

Novel Analytical Methods for Cleaning Evaluation

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