Novel Method of Estimating Dielectric Constant for Low-k Materials

Fukuda, Takuya; Aoi, Nobuo; Matsunaga, Hironori

doi:10.1143/jjap.41.l307

Cited by 13 publications

(15 citation statements)

References 1 publication

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“…Endo et al 27 30 and XPS analysis revealed only a small amount of oxygen in our films. The slight decrease with the frequency observed at higher frequencies is believed to result from incomplete dielectric relaxation occurring at frequencies higher than 10 kHz.…”

Section: A Dielectric Constantmentioning

confidence: 46%

Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor. II. Dielectric and insulating properties

Biloiu

Sakai

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Amorphous fluorocarbon polymer films (a-C:F) have been grown by plasma enhanced chemical vapor deposition from a new precursor, namely perfluoro-octane (C8F18) vapor. The dielectric and insulating properties of the films have been assessed by means of capacitance–voltage and current–voltage characteristics, breakdown voltage measurements, scanning electron microscopy, and ellipsometric analyses. In the investigated frequency range, 120 Hz–1 MHz, the films have a low dielectric constant (≈2.4) and a low dielectric loss (⩽3×10−2). The electrical conduction mechanism is ohmic in the weak electric field regime, with a bulk resistivity of 4×1015 Ω cm, and a trap modulated space charge limited conduction in the strong electric field regime. For a film thickness between 1 and 12 μm, the dielectric strength varies with film thickness according to EB∼h−0.53. For a film thickness of 1 μm the film dielectric strength was 2.7 MV/cm while for 12 μm it decreased to 0.9 MV/cm. Measurements of the breakdown voltage in nitrogen gas in the low pressure regime between a-C:F coated cathode and copper anode showed an enhancement of the breakdown voltage by a factor of 2.5 with respect to the case of copper–copper electrodes.

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Section: A Dielectric Constantmentioning

confidence: 46%

Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor. II. Dielectric and insulating properties

Biloiu

Sakai

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…6͑b͔͒ is relatively unchanged for all three porosities studied. According to Fukuda et al 39 the Si-H bond, with a representative refractive value of 3.201, is much more polar than the Si-O bond, which has a representative refractive value of 1.75. Also of note is that all three porosities collapse onto the same line indicating modified layer growth rate is independent of porosity.…”

Section: Reactive Species Concentrationmentioning

confidence: 99%

Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature

Worsley

Bent

Gates³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inThe effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications AIP Advances 2, 032128 (2012); 10.1063/1.4742852Dependences of Young's modulus of porous silica low dielectric constant films on skeletal structure and porosity Surface modified silica mesoporous films as a low dielectric constant intermetal dielectric Integration of new low-interlayer dielectrics ͑ILD͒ with current damascene schemes is a continuing issue in the microelectronics industry. During integration of the ILD, processing steps such as plasma etching, resist strip, and chemical-mechanical planarization are known to chemically alter a layer of the dielectric. Here, porous organosilicate glass ͑OSG͒ ILD films, which-according to the 2004 edition of the International Technology Roadmap for Semiconductors-are projected for use in the 65 and 45 nm nodes, are investigated. spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are used to characterize the modified layer of the ILD after exposure to O 2 or H 2 resist strip plasmas. The effects of the two types of plasma etch chemistries on the formation of the modified layer were found to differ significantly. These effects include both the degree of modification ͑i.e., chemical composition͒ and depth of the modified layer. A key difference between the O 2 and H 2 plasmas is that silicon hydride groups are present in the modified layer after exposure to H 2 plasma but not after exposure to the O 2 plasma. In addition, the influence of OSG porosity on the etch rate and modified layer thickness was investigated for porosities ranging from 0-45 %. As expected, the etch rate was found to increase rapidly with porosity. Finally, conditions including reactive gas concentrations and substrate temperature for the H 2 plasma were varied. These parameters produced considerable changes in the chemistry of the modified layer, especially in the amount of hydrogen incorporated into the film. Details of these results will be discussed in the context of the mechanism by which modification and etching occurs as well as which process variables dominate those phenomena.

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“…A lot of low-k materials such as organic-based low-k materials and silica-based materials have been widely investigated. Among them is an organic-based material with , which contains aromatic rings in their skeleton structure [2], [3].…”

Section: Introductionmentioning

confidence: 99%

Via-Shape-Control for Copper Dual-Damascene Interconnects With Low-k Organic Film

Kinoshita

Tada

Hiroi

et al. 2008

IEEE Trans. Semicond. Manufact.

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Copper dual-damascene (DD) interconnects are fabricated with low-k organic film (SiLK™) without any etch-stop layers by use of dual hard mask (dHM) process combined with sidewall-hardening etching step. It is a key point to reduce shoulder loss during trench etching at connecting regions of vias and trenches, so that hardening of the via-sidewall by fluorocarbon plasma during via etching is implemented. Careful designs of dual hard mask structures and their patterning sequence are carried out for the process without etch-stop layer under the trench. The two-layered interconnect with low-k structure has achieved low via-resistance of 0.65 at 0.28 m with keeping large tolerance of misalignment up to 0.1 m.

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Novel Method of Estimating Dielectric Constant for Low-k Materials

Cited by 13 publications

References 1 publication

Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor. II. Dielectric and insulating properties

Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor. II. Dielectric and insulating properties

Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature

Via-Shape-Control for Copper Dual-Damascene Interconnects With Low-k Organic Film

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