Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs

Islam, Md. Shafiqul; McNally, Patrick J.

doi:10.1109/16.915736

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2002

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“…It should be mentioned that, in the literature, even lower values have been reported for resistances of AuGe [1,2] and PdGe [29] ohmic contacts in the range of (0.5-1) × 10 −6 cm 2 . However, the specific contact resistance of Al(Se)-nGaAs ohmic contacts, obtained in our experiments, is comparable with other novel ohmic contact schemes, for instance, the Pd/Sn/Au ohmic contact (8.1 × 10 −6 cm 2 ) [30], and is very convenient for fabrication.…”

Section: Resultssupporting

confidence: 84%

Low resistance Al nGaAs ohmic contacts

Meškinis¹,

Šlapikas²,

Smetona³

2002

Semicond. Sci. Technol.

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In this paper, we investigate the influence of annealing on the current-voltage characteristics of Al-nGaAs contacts treated with selenious acid (H 2 SeO 3 ). Low-resistivity ohmic contacts were obtained by furnace annealing of Al-GaAs contacts formed on Se modified GaAs surfaces. A specific resistivity as low as 7.5 × 10 −6 cm 2 has been achieved with an Al-nGaAs ohmic contact on an n + GaAs substrate. The formation of the Al-nGaAs ohmic contact is explained by an interface Se reaction with both GaAs and Al.

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Section: Resultssupporting

confidence: 84%