Novel Physics-Based Small-Signal Modeling and Characterization for Advanced RF Bulk FinFETs

Zhang, Wenyuan; Yin, Sen; Hu, Wencheng; Wang, Yan

doi:10.1109/ted.2021.3063211

Cited by 11 publications

(2 citation statements)

References 20 publications

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“…When entering millimeter-wave even T-Hz band, the transistors will experience severe parasitic effects [4]. An accurate physically oriented circuit model and parameter extraction technique for a GAA nanosheet transistor are very important to evaluate the fabrication process, optimize the device structure and help in circuit design [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 nm Gate-All-Around Nanosheet Transistor

Sun

Gao

et al. 2022

Processes

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This paper presents a novel RF small-signal equivalent circuit model and parameter extraction for 3 nm nanosheet gate-all-around field effect transistor (GAAFET). The extrinsic parasitic effect induced by ground-signal-ground (GSG) layout is evaluated by 3D full-wave electromagnetic simulation, and an improved five-step analytical parameter extraction method is proposed for such extrinsic GSG layout. The model parameters for the intrinsic device are analytically determined with the help of nonlinear rational function fitting. The accuracy of the proposed extraction method was confirmed via comparisons between device simulator and electromagnetic simulator with frequency responses up to 300 GHz. Excellent agreement is obtained between the simulated and modeled S-parameters, and the calculated error is lower than 2.689% for the extrinsic layout, and 0.897% for the intrinsic device in the whole frequency range among multi-bias points.

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Section: Introductionmentioning

confidence: 99%

Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 nm Gate-All-Around Nanosheet Transistor

Sun

Gao

et al. 2022

Processes

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“…I N recent years, FinFETs have become the gold standard in the electronic industry due to their superior properties in comparison to conventional FETs [1], [2]. Their trigate nature suppresses the short channel effects [3], which consequently improves the device transconductance, reduces its leakage current and enhances the device scalability [4]- [6]. AlGaN/GaN FinFETs have the potential to further supplement FET development owing to their improved 2DEG characteristics and temperature stability [7]- [9].…”

Section: Introductionmentioning

confidence: 99%

A Unified Depletion/Inversion Model for Heterojunction Trigate FinFETs DC Characteristics

Memon

Ahmed

2021

IEEE Access

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This paper presents a comprehensive I − V model for the evaluation of above threshold DC characteristics of trigate AlGaN/GaN FinFETs for both depletion and inversion mode of operations. For the depletion mode, 2DEG carrier concentration, n s , is evaluated considering the trigate geometry of the device, which is then used to assess drain current (I 2D ) for both the linear as well as the saturation region of operations. At a relatively higher gate bias, where the 2DEG is fully un-depleted, a significant rise in the drain current is observed which is associated with the creation of two additional side channels in the GaN layer of AlGaN/GaN FinFET, caused by the inversion of carriers. This component of the drain current, referred to as inversion current (I inv ), is modeled using the solution of a 2D Poisson equation. The total current (I ds ) is the summation of both the depletion as well as the inversion currents (I ds = I inv + I 2D ). The developed technique is validated using experimental data and is seen to exhibit a good degree of accuracy. Therefore, the proposed model could serve as a useful tool to predict AlGaN/GaN FinFETs output and transfer characteristics.

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Radio‐Frequency‐Integrated Circuits

Chongcheawchamnan,

Karacaoglu,

Amsdon

et al. 2024

Encyclopedia of RF and Microwave Engineering

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This chapter gives an overview of the technology and design of radiofrequency (RF)‐integrated circuits in silicon technology. These circuits have transformed the field of wireless communications, forming the heart of sophisticated multiple‐input, multiple‐output RF transceivers for use in cellular handsets. The technology is now starting to transform new fields in the millimeter‐wave frequency range, enabling it to be used for new consumer applications such as radars for autonomous cars. The chapter describes the key active device technologies and passive components before going on to describe the state of the art in circuit design techniques. There are separate sections dedicated to the design of amplifiers, oscillators, mixers and modulators, and integrated transceivers. A final section gives an introduction to the importance of taking the packaging into account at the chip design and layout stage, as well as describing the rapidly emerging field of RF system‐in‐package technology, where sophisticated millimeter‐wave antenna arrays can be integrated with active circuits. The chapter includes 180 references to research papers describing advanced techniques developed in both industry and academia.

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Novel Physics-Based Small-Signal Modeling and Characterization for Advanced RF Bulk FinFETs

Cited by 11 publications

References 20 publications

Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 nm Gate-All-Around Nanosheet Transistor

Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 nm Gate-All-Around Nanosheet Transistor

A Unified Depletion/Inversion Model for Heterojunction Trigate FinFETs DC Characteristics

Radio‐Frequency‐Integrated Circuits

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