Novel prototype Si detector development and processing at BNL

Li, Z; Beuttenmuller, R.; Chen, W; Elliott, D.; Radeka, V.; Takahashi, J.; Zhang, W.C

doi:10.1016/s0168-9002(01)01815-0

Cited by 10 publications

(4 citation statements)

References 15 publications

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“…Developed by Park at University of Hawaii [54], the 3D detector got its name from the way it is processed. Different from conventional planar technology, p + and n + electrodes are diffused in small holes along the detector thickness ("3-d" processing), as shown in figure 19.…”

Section: D Detectorsmentioning

confidence: 99%

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Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Li¹

2009

J. Inst.

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Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, space charge concentration, and free carrier trapping. For LHC applications, where the total fluence is in the order of 1x10 15 n eq /cm 2 for 10 years, the increase in space charge concentration has been the main problem since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. For LHC Upgrade, or the SLHC, however, whit an increased total fluence up to 1x10 16 n eq /cm 2 , the main limiting factor for Si detector operation is the severe trapping of free carriers by radiation-induced defect levels. Several new approaches have been developed to make Si detector more radiation hard/tolerant to such ultra-high radiation, including 3D Si detectors, Current-Injected-Diodes (CID) detectors, and Elevated temperature annealing.

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Section: D Detectorsmentioning

confidence: 99%

“…Stimulated by the lateral depletion nature of the 3D detectors [5,54], the novel idea of Semi-3D detectors was first developed by BNL in 2000 [55]. As shown in figure 18 for a p + -n + /n/n + Semi-3D Si strip detector, both p + and n + strips are implemented on the front side.…”

Section: Semi-3d Detectorsmentioning

confidence: 99%

Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

Li¹

2009

J. Inst.

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“…The so-called ''3D'' [44] and ''semi-3D'' detectors [45] offer a reduced full depletion voltage but still a 300 mm thick active layer provide the same charge as in standard planar devices. Prototype detectors of both variants have been produced in the framework of RD50.…”

Section: D and Semi-3d Detectorsmentioning

confidence: 99%

“…Semi-3D detectors are single-sided planar devices that have alternating n + -and p + -strips on the front side while the rear side has a uniform n + -implant [45]. According to simulations, the advantage of this design should be observed after type inversion when the bulk of the detector is converted to p-type.…”

Section: D and Semi-3d Detectorsmentioning

confidence: 99%