Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

Fretwurst, E.; Adey, J; Al-Ajili, A.; Alfieri, Giovanni; Allport, P. P.; Artuso, M.; Assouak, S.; Avset, B. S.; Barabashi, L; Barcz, A.; Bates, R. L.; Biagi, S.; Bilei, G. M.; Bisello, D.; Blue, A.; Blumenau, A.T.; Boisvert, V.; Bolla, G.; Bondarenko, G.B.; Borchi, E.; Borrello, L.; Bortoletto, D.; Boscardin, M.; Bosisio, L.; Bowcock, T. J. V.; Brodbeck, T. J.; Brož, Jan; Bruzzi, M.; Brzozowski, A.; Buda, M.; Buhmann, P.; Buttar, C. M.; Campabadal, F.; Campbell, Duncan; Candelori, A.; Casse, G.; Cavallini, A.; Charron, Sylvie; Chilingarov, A.; Chren, D.; Cindro, V.; Collins, P.; Coluccia, Rosario; Contarato, Devis; Coutinho, J.; Creanza, D.; Cunningham, L.; Betta, G.-F. Dalla; Dawson, I.; Boer, W. De; Palma, M. De; Démina, R.; Dervan, P.; Dittongo, S.; Doležal, Z.; Dolgolenko, A. P.; Eberlein, Tim; Eremin, V.; Fall, C. J.; Fasolo, F.; Ferbel, T.; Fizzotti, F.; Fleta, C.; Focardi, E.; Forton, E.; García, C.; Navarro, J. E. García; Gaubas, E.; Genest, M. H.; Gill, K.; Giolo, K.; Gläser, M.; Goessling, C.; Golovine, V.; Sevilla, SG; Gorelov, I.; Goss, J. P.; Bates, A.; Grégoire, G.; Gregori, P.; Grigoriev, E.; Grillo, A.A.; Groza, A.A.; Guskov, J.; Haddad, L.; Härkönen, J.; Hauler, F.; Hoeferkamp, M. R.; Hönniger, F.; Horažďovský, T.; Horisberger, R.; Horn, Mark W.; Houdayer, A.; Hourahine, B.; Hughes, G.; Ilyashenko, I.; Irmscher, K.; Ivanov, Andrew; Jarašiūnas, K.; Johansen, K. M.; Jones, B.K.; Jones, R.; Joram, C.; Jungermann, L.; Kalinina, Evgenia V.; Kamiński, P.; Karpenko, A.; Karpov, A.; Kazlauskienė, V.; Kažukauskas, V.; Khivrich, V.I.; Khomenkov, V.; Kierstead, J.; Klaiber-Lodewigs, J.; Klingenberg, R.; Kodyš, P.; Kohout, Z.; Korjenevski, S.; Koski, M.; Kozłowski, Roman; Kozodaev, M. A.; Kramberger, G.; Krasel, O.; Kuznetsov, A. Yu.; Kwan, S.; Lagomarsino, S.; Lassila-Perini, K.; Lastovetsky, V.F.; Latino, G.; Lazanu, I.; Lazanu, S.; Lebedev, A.; Lebel, C.; Leinonen, Kari; Leroy, C.; Li, Z; Lindström, G.; Linhart, V.; Litovchenko, P.G.; Litovchenko, A.; Giudice, AL; Lozano, M.; Łuczyński, Z.; Luukka, P.; Macchiolo, A.; Макаренко, Л. Ф.; Mandić, I.; Manfredotti, C.; Manna, N.; Garcı́a, S. Martı́ i; Marunko, S.; Mathieson, Keith; Melone, J.; Menichelli, D.; Messineo, A.; Metcalfe, J.; Miglio, S.; Mikuž, M.; Miyamoto, J.; Moll, M.; Monakhov, Edouard; Moscatelli, F.; Naoumov, D.; Nossarzewska-Orłowska, E.; Nystén, J.; Olivero, P.; O’Shea, V.; Palviainen, Tanja; Paolini, C.; Parkes, C.; Pesseri, D; Pein, U.; Pellegrini, G.; Perera, L.; Petasecca, Marco; Plemonte, C; Pignatel, G.U.; Pinho, N.; Pintilie, I.; Pintilie, L.; Polivtsev, L.A.; Polozov, P.; Popa, A; Popule, J.; Pospı́šil, S.; Pozza, A.; Radicci, V.; Rafi, JM; Rando, R.; Roeder, R.S.; Rohe, T.; Ronchin, S.; Rott, C.; Roy, Amitava; Ruzin, A.; Sadrozinski, H. F-W.; Sakalauskas, S.; Scaringella, M.; Schiavulli, L.; Schnetzer, S.; Schumm, B. A.; Sciortino, S.; Scorzoni, A.; Segneri, G.; Seidel, S. C.; Seiden, A.; Sellberg, G.; Sellin, P.J.; Sentenac, D.; Shipsey, I. P. J.; Šı́cho, P.; Sloan, T.; Solar, M.; Son, Seunghee; Sopko, B.; Sopko, V.; Spencer, N.; Ståhl, Jan-Eric; Stolze, D.; Stone, R.; Storasta, J.; Strokan, N. B.; Sūdžius, M.; Sgorbini, Barbara; Suvorov, A. S.; Svensson, B. G.; Tipton, P.; Tomášek, M.; Цветков, А. И.; Tuominen, E.; Tuovinen, E.; Tuuva, T.; Tylchin, M.; Uebersee, H.; Uher, J.; Ullán, M.; Vaitkus, J.; Velthuis, J. J.; Verbitskaya, E.; Vrba, V.; Wagner, G.; Wilhelm, I.; Worm, S. D.; Wright, V.; Wunstorf, R.; Yiuri, Y; Zabierowski, P.; Zaluzhny, A.; Zavrtanik, M.; Zen, M.; Жуков, В.; Zorzi, N.

doi:10.1016/j.nima.2005.05.039

Cited by 32 publications

(11 citation statements)

References 40 publications

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“…4(b), the time constants for the annealing at 80 C of the leakage current and of the concentration of V 3 defects in planar configuration (PHR) are very similar, s ¼ (44 6 3) min for LC and s ¼ (43 6 2) min for V 3 . These experiments indicate that the variation seen in the leakage current is entirely related to the change in the concentration of V 3 in PHR configuration.…”

Section: Defect Investigationsmentioning

confidence: 94%

“…The spectrum in the range 95 K to 300 K is magnified by a factor of 3. It has been shown previously 28,30 that the defects explaining the main part of the leakage current are the tri-vacancies V 3 (À/0) (also known as a cluster-related defect).…”

Section: Defect Investigationsmentioning

confidence: 99%

“…Any promising attempt for radiation hardening of the silicon material as well as improvements by modifying the detector processing will rely on a thorough knowledge of the generation of electrically active defects in the bulk material. Macroscopic effects induced by irradiation in silicon detectors as seen from the device electrical characteristics measured at room temperature (RT) are: [3][4][5][6][7][8][9][10] (i) Strong increase of the detector leakage current (LC). This fact requires cooling to cope with the otherwise unavoidable heating due to the dissipation power in large area installations thus to ensure a tolerable signal/noise ratio for the detection of minimum ionizing particles.…”

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confidence: 99%

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Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

Radu

Pintilie

Nistor

et al. 2015

Journal of Applied Physics

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This work is focusing on generation, time evolution, and impact on the electrical performance of silicon diodes impaired by radiation induced active defects. n-type silicon diodes had been irradiated with electrons ranging from 1.5 MeV to 27 MeV. It is shown that the formation of small clusters starts already after irradiation with high fluence of 1.5 MeV electrons. An increase of the introduction rates of both point defects and small clusters with increasing energy is seen, showing saturation for electron energies above ∼15 MeV. The changes in the leakage current at low irradiation fluence-values proved to be determined by the change in the configuration of the tri-vacancy (V3). Similar to V3, other cluster related defects are showing bistability indicating that they might be associated with larger vacancy clusters. The change of the space charge density with irradiation and with annealing time after irradiation is fully described by accounting for the radiation induced trapping centers. High resolution electron microscopy investigations correlated with the annealing experiments revealed changes in the spatial structure of the defects. Furthermore, it is shown that while the generation of point defects is well described by the classical Non Ionizing Energy Loss (NIEL), the formation of small defect clusters is better described by the “effective NIEL” using results from molecular dynamics simulations.

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Section: Defect Investigationsmentioning

confidence: 94%

Section: Defect Investigationsmentioning

confidence: 99%

mentioning

confidence: 99%

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Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

Radu

Pintilie

Nistor

et al. 2015

Journal of Applied Physics

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“…For the S-LHC the detectors closest to the beam have to perform at hadron fluences up to several 10 under complex, long term operation scenarios [4][5][6]. The limitations for their practical application in the hadron colliders are caused by irradiation induced defects leading to changes in the effective doping concentration (N e f f ) respectively full depletion voltage (V dep ), the reverse current at the depletion voltage (I dep ) and the degradation in the charge collection efficiency (CCE) [5][6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Pintilie

Lindstroem

Junkes

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

126

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This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60 Co-γ rays, 6 and 15 MeV electrons, 23 GeV protons and reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the "microscopic" reasons as based on defect analysis and their "macroscopic" consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties after exposure to high levels of 60 Co-γ doses can be completely understood by the formation of two point defects, both depending strongly on the oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease respectively increase the originally observed damage effects as seen by the changes of the depletion voltage. A group of three cluster related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the oxygen content or silicon growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions.

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“…ilicon detectors fabricated on p-type material are most promising candidates for tracking detectors at Super LHC experiments [1][2][3]. Microstrip detectors with n side readout have shown acceptable charge collection efficiency (CCE) after irradiation [4].…”

Section: Introductionmentioning

confidence: 99%

Trapping of Electrons and Holes in p-type Silicon Irradiated with Neutrons

Cindro

Kramberger

Lozano

et al. 2006

2006 IEEE Nuclear Science Symposium Conference Record

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Trapping times of drifting electrons and holes were measured in high resistivity standard, oxygenated and magnetic Czochralski p-type materials with charge correction method. Diodes were irradiated with neutrons up to equivalent fluence Φ eq =3x10 14 cm -2 . Trapping times were parameterized as 1/τ=βΦ. Average β was measured to be β e =4.2x10 -16 cm 2 ns -1 for electrons and β h = 4.3x10 -16 cm 2 ns -1 for holes.

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Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

Cited by 32 publications

References 40 publications

Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Trapping of Electrons and Holes in p-type Silicon Irradiated with Neutrons

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