Novel sloped etch process for 15nm InAlAs/InGaAs metamorphic HEMTs

Yeon, Seong-Jin; Park, Myung Hwan; Seo, Kwang-Seok

doi:10.1109/nano.2007.4601387

Cited by 3 publications

(2 citation statements)

References 7 publications

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“…Traditionally, researchers fabricate small gate length (L G ) devices with the E-beam Lithography System [6], [7], [8], [33]. However, for mass production of the GaN HEMT for 5G commercial applications, the E-beam Lithography Process is complicated, high cost, and time consuming.…”

Section: Introductionmentioning

confidence: 99%

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

Lee

Lin

Chang

et al. 2023

IEEE J. Electron Devices Soc.

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This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. Small gate length (L G ) of 100 nm was achieved through a 2-Step Photolithography Process and the gate region of the AlGaN/GaN HEMT was defined by using two lithography steps to form gamma-shaped gates. The 4-inch AlGaN/GaN HEMT wafer demonstrated high electrical performance uniformity with respect to the maximum drain-source current density (I DSS ), the peak extrinsic output transconductance (G m ), and the threshold voltage (V th ). At V DS = 20 V, the AlGaN/GaN HEMT exhibits an I DSS of 1004.2 mA/mm, a Gm value of 363.6 mS/mm, a maximum output power density (P OUT (MAX) ) of over 10 W/mm, and a power gain of 8.8 dB with a maximum 51.1% Power-added efficiency (PAE) at 28 GHz in Continuous Wave (CW) mode. The results show the potential of AlGaN/GaN HEMT fabrication with high yield and outstanding RF performance using Stepper Lithography for 5G applications.INDEX TERMS 5G, high uniformity, output power, stepper lithography, small gate length.

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Section: Introductionmentioning

confidence: 99%

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

Lee

Lin

Chang

et al. 2023

IEEE J. Electron Devices Soc.

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“…Therefore, high electron mobility transistors (HEMTs) have now been widely used in high-frequency electronics, such as antennas and broadband satellites [ 2 ]. In addition to Gallium Arsenide (GaAs) HEMTs [ 5 , 6 , 7 ], Gallium Nitride (GaN) HEMTs [ 8 , 9 , 10 , 11 , 12 ] have been used in high radio frequency (RF) power components, such as an mm-wave power amplifier, due to its high breakdown voltage, high critical field, wide bandgap, and high electron peak velocity [ 13 , 14 , 15 , 16 ].…”

Section: Introductionmentioning

confidence: 99%

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

et al. 2023

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In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and nine-etched-fin devices, which have 50-μm, 25-μm, 10-μm, and 5-μm partial gate widths, respectively, the four-etched-fin gate AlGaN/GaN HEMT devices have demonstrated optimized device linearity with respect to the extrinsic transconductance (Gm) value, the output third order intercept point (OIP3), and the third-order intermodulation output power (IMD3) level. The IMD3 is improved by 7 dB at 30 GHz for the 4 × 50 μm HEMT device. The OIP3 is found to reach a maximum value of 36.43 dBm with the four-etched-fin device, which exhibits high potential for the advancement of wireless power amplifier components for Ka band applications.

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Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch

Shao

Deng

et al. 2017

J. Micro/Nanolith. MEMS MOEMS

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Novel sloped etch process for 15nm InAlAs/InGaAs metamorphic HEMTs

Cited by 3 publications

References 7 publications

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch

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