Novel technique to engineer aluminum profile at nickel-silicide/Silicon:Carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors

Koh, Shao-Ming; Zhou, Qian; Thanigaivelan, Thirumal; Henry, Todd C.; Samudra, Ganesh S.; Yeo, Yee-Chia

doi:10.1109/iedm.2011.6131681

Cited by 4 publications

(1 citation statement)

References 6 publications

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“…However, an obvious discrepancy was observed between N2 and N4 as shown in Figure 4 : a higher implantation energy of Al resulted in a higher Al concentration at the interface accompanied by a higher density of Al remaining in the NiSi film. Previous studies have indicated that Al has a dual-barrier tuning effect [ 18 , 38 ], including reducing φ bn when incorporated with nickel silicide [ 39 , 40 , 41 ] and reducing φ bp at NiSi/Si interfaces. It has been reported that the incorporation of Al in NiSi could reduce the metal work function of NiSi by up to 400 meV [ 39 ].…”

Section: Resultsmentioning

confidence: 99%

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Sun

et al. 2018

Materials

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Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. Because of the solubility limits of dopants in silicon, the requirements for effective hole SBH reduction with dopant segregation cannot be satisfied using mono-implantation. In this study, we demonstrate a potential solution for further SBH tuning by implementing the dual implantation of boron (B) and aluminum (Al) in combination with microwave annealing (MWA). By using such a method, not only has the lowest hole SBH ever with 0.07 eV in NiSi/n-Si contacts been realized, but also the annealing duration of MWA was sharply reduced to 60 s. Moreover, we investigated the SBH tuning mechanisms of the dual-implanted diodes with microwave annealing, including the dopant segregation, activation effect, and dual-barrier tuning effect of Al. With the selection of appropriate implantation conditions, the dual implantation of B and Al combined with the MWA technique shows promise for the fabrication of future p-channel SB-MOSFETs with a lower thermal budget.

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Section: Resultsmentioning

confidence: 99%

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Sun

et al. 2018

Materials

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Device scaling and performance improvement: Advances in ion implantation and annealing technologies as enabling drivers

Erokhin

2012

2012 12th International Workshop on Junction Technology

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The complexity of ion implant applications in IC fabrication has grown significantly since becoming the preferred process for doping semiconductors. Aggressive device scaling over the last decade raised unique challenges. This resulted in the invention of novel implant applications to address device scaling driven issues and the development of new generations of ion implanters. These newly developed tools are capable of delivering a wide variety of ion beams of traditional doping and non-doping species, with manufacturing worthy beam currents over an energy range extending from 200 eV to several MeV. They are capable of controlling implanted wafer temperature down to cryogenic conditions to take full advantage of new defect engineering approaches. All these innovations resulted in significant growth of ion implantation steps in advanced IC manufacturing for both doping and Precision Materials Modification (PMM). In this paper we present an overview of recent advances in ion implantation technologies and applications addressing sub-20nm device and process integration challenges. We illustrate how these innovations enable improvement of device performance and expansion of process margins through novel capabilities of ion implantation tools coupled with innovative materials engineering approaches for junction formation and for process modules beyond of traditional doping applications.

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Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

Zhou

Koh

Thanigaivelan

et al. 2013

IEEE Trans. Electron Devices

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Novel technique to engineer aluminum profile at nickel-silicide/Silicon:Carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors

Cited by 4 publications

References 6 publications

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Device scaling and performance improvement: Advances in ion implantation and annealing technologies as enabling drivers

Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

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